Low cost packaging for thin-film resonators and thin-film resonator-based filters

• US 6,087,198 A
• Filed: 02/12/1998
• Issued: 07/11/2000
• Est. Priority Date: 02/12/1998
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Panasik, Carl M.
• Primary Examiner(s): CHAUDHARI, CHANDRA P
• Application Number:
  US09/022,905
• Time in Patent Office: 880 Days
• Field of Search: 438/50, 438/51, 438/52, 438/53, 438/118, 438/127, 438/592
• US Class Current: 438/51
• CPC Class Codes: H03H 9/174 Membranes
• CPC Class Codes: H03H 9/175 Acoustic mirrors

Abstract

An acoustic reflector (48) is applied over a thin-film piezoelectric resonator (41, 61) which is supported on a semiconductor or semiconductor-compatible substrate (42, 62) of a microelectronic device (40, 60), enabling an encapsulant (49) to be applied over the reflector-covered resonator without acoustically damping the resonator. In one embodiment, alternating high and low acoustic impedance layers (51, 53 . . . 55) of one-quarter wavelength thicknesses constructively reflect the resonating wavelength to make an encapsulant in the form of an inexpensive plastic molding compound appear as a "clamping" surface to a resonator (41) peripherally supported over an opening (43) on a silicon substrate (42). In another embodiment, an encapsulant- and reflector-covered resonator (61) is mechanically supported above a second reflector (68) which eliminates the need for peripheral support, making substrate (68) also appear as a clamping surface. The invention enables low cost plastic packaging of resonators and associated circuitry on a single monolithic structure. A radio frequency transceiver front-end application is given as an exemplary implementation.

Claims

1. A method for making a microelectronic device including an acoustic resonator, said method comprising the steps of:

providing a substrate;

disposing a piezoelectric resonator on the substrate;

disposing an acoustic reflector over and acoustically coupled to the piezoelectric resonator; and

encapsulating the piezoelectric resonator and acoustic reflector with an encapulsant acoustically coupled to the reflector.

2. The method of claim 1, further comprising the steps of:

disposing a second acoustic reflector between and acoustically coupled to the substrate and the piezoelectric resonator.

3. The method of claim 1, wherein the substrate comprises silicon;

the piezoelectric resonator disposing step comprises depositing a first electrode layer of metal, depositing a layer of piezoelectric material over the first electrode layer, and depositing a second electrode layer of metal deposited over the piezoelectric material layer.

4. The method of claim 3, wherein the acoustic reflector depositing step comprises depositing alternating acoustic reflecting layers of first and second acoustic impedance materials over the second electrode layer of metal;

the first acoustic impedance being higher than the second acoustic impedance.

5. The method of claim 4, wherein the acoustic resonator has a given resonating wavelength;

and wherein the reflecting layers are deposited to thicknesses which will cause constructive interference of the reflected waves at the resonating wavelength.

6. The method of claim 5, wherein the reflecting layers are deposited to thicknesses of one-quarter of the resonating wavelength.

7. The method of claim 1, wherein the encapsulating step comprises flowing an encapsulating compound conformally over the acoustic reflector and piezoelectric resonator, and curing the flowed encapsulating compound in place.

8. The method of claim 7, wherein the encapsulating step comprises reactive polymer processing of a plastic encapsulating compound.

9. The method of claim 8, wherein the encapsulating compound comprises an epoxy, polyimide or silicone resin.

10. The method of claim 9, wherein the encapsulating compound comprises an epoxy novalac-based resin.

11. A method for making a microelectronic device including an acoustic resonator, said method comprising the steps of:

providing a silicon substrate;

depositing a first acoustic reflector on and acoustically coupled to the substrate;

depositing a first electrode layer over and acoustically coupled the first acoustic resonator;

depositing a piezoelectric material layer over and acoustically coupled to the first electrode layer;

depositing a second electrode layer over and acoustically coupled the piezoelectric material layer;

depositing a second acoustic reflector over and acoustically coupled to the second electrode layer; and

flowing a curable encapsulant over the deposited first and second acoustic reflectors, first and second electrode layers and piezoelectric material layers; and

curing the flowed encapsulant in place.