Thin-film transistor display devices having composite electrodes

• US 6,087,678 A
• Filed: 02/28/1997
• Issued: 07/11/2000
• Est. Priority Date: 02/29/1996
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Dong-gyu
• Primary Examiner(s): Abraham, Fetsum
• Application Number:
  US08/808,886
• Time in Patent Office: 1,229 Days
• Field of Search: 257/59, 257/61, 257/72, 257/347-353
• US Class Current: 257/59
• CPC Class Codes: G02F 1/13458 Terminal pads
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/13629 Multilayer wirings
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Abstract

Thin-film transistor display devices include composite electrodes which provide low resistance contacts and paths for electrical signals and are less susceptible to parasitic metal migration which can limit display quality and lifetime. In particular, a thin-film transistor (TFT) display device is provided having an insulated gate electrode on a face of a substrate (e.g., transparent substrate) and a semiconductor layer on the insulated gate electrode, opposite the face of the substrate. Spaced apart source and drain electrodes are also provided on the semiconductor layer. These source and drain electrodes each preferably comprise a composite of at least two layers containing respective metals therein of different element type. Preferably, one of the layers comprises a metal which is capable of forming a low resistance contact with electrodes such as a pixel electrode (e.g., transparent indium-tin-oxide electrode) and the other of the layers comprises a relatively low resistance metal so that the overall effective resistance of each composite electrode is maintained at a low level.

Claims

1. A thin-film transistor display device, comprising:

an insulated gate electrode on a face of a substrate, said insulated gate electrode comprising an underlying first gate layer containing a refractory metal selected from the group consisting of chromium, molybdenum, titanium and tantalum, on the face of said substrate, and a second gate layer containing aluminum, on an upper surface of the first gate layer;

a semiconductor layer on said insulated gate electrode, opposite the face;

spaced apart source and drain electrodes on said semiconductor layer, said drain electrode comprising an underlying first refractory metal layer in contact with said semiconductor layer and a first metal layer containing aluminum on an upper surface of the first refractory metal layer;

a gate pad comprising indium-tin-oxide in contact with an upper surface of the first gate layer; and

a pixel electrode directly contacting the first refractory metal layer;

wherein said source electrode comprises an underlying second refractory metal layer in contact with said semiconductor layer and a second metal layer containing aluminum on an upper surface of the second refractory metal layer;

wherein said semiconductor layer comprises a first amorphous silicon layer on said insulated gate electrode and a second amorphous silicon layer, containing dopants therein of predetermined conductivity type, on the first amorphous silicon

wherein the first refractory metal layer ohmically contacts the second amorphous silicon layer; and

wherein said pixel electrode comprises indium-tin-oxide.

2. The thin-film transistor of claim 1, wherein said insulated gate electrode comprises a first electrically insulating layer having a thickness of less than about 3000 Å

on the second gate layer;

wherein the first amorphous silicon layer has a thickness of about 2000 Å

; and

wherein the second amorphous silicon layer has a thickness of about 500 Å

.

3. The thin-film transistor of claim 2, wherein the first and second gate layers have thicknesses of about 1000 Å

and 2000 Å

, respectively.

4. A thin-film transistor display device, comprising:

an insulated gate electrode on a face of a substrate, said gate electrode comprising a first refractory metal layer and a first aluminum metal layer on the first refractory metal layer;

a semiconductor layer on said insulated gate electrode, opposite the face;

spaced apart source and drain electrodes on said semiconductor layer, said drain electrode comprising a second refractory metal layer and a second aluminum metal layer;

a pixel electrode comprising a transparent material electrically coupled to said drain electrode; and

a gate pad comprising a transparent material in direct contact with the upper surface of the first refractory metal layer.

5. The display device of claim 4, wherein the second aluminum metal layer extends on an upper surface of the second refractory metal layer;

and wherein said pixel electrode directly contacts the second refractory metal layer.

6. A thin-film transistor display device, comprising:

a gate electrode on a face of a substrate;

a first insulating layer on said gate electrode;

a semiconductor layer on said first insulating layer;

spaced apart source and drain electrodes on said semiconductor layer, said drain electrode comprising an underlying refractory metal layer in contact with said semiconductor layer and a non-refractory metal layer on the refractory metal layer;

a second insulating layer directly contacting a portion of said semiconductor layer and having a contact hole therein that exposes the refractory metal layer and side walls of the non-refractory metal layer; and

a pixel electrode on said second insulating layer, said pixel electrode extending into the contact hole and directly contacting said refractory metal layer.

7. The display device of claim 6, wherein the underlying refractory metal layer comprises a material selected from the group consisting of chromium, molybdenum, titanium and tantalum.

8. The display device of claim 6, wherein the underlying refractory metal layer comprises chromium.

9. The display device of claim 6, wherein said semiconductor layer comprises an amorphous silicon layer and a doped amorphous silicon layer;

and wherein a portion of said second insulating layer directly contacts the amorphous silicon layer.

10. The display device of claim 6, wherein the non-refractory metal layer comprises aluminum.

11. The display device of claim 6, wherein said second insulating layer comprises silicon nitride.

12. The display device of claim 6, wherein said pixel electrode comprises indium-tin-oxide.

13. The display device of claim 6, further comprising:

a data line comprising an underlying refractory metal layer on the semiconductor substrate and a metal layer on the underlying refractory metal layer; and

a data pad contacting the refractory metal layer in said data line.

14. The display device of claim 6, further comprising:

a gate line comprising an underlying refractory metal layer on the semiconductor substrate and a metal layer on the underlying refractory metal layer; and

a gate pad contacting the refractory metal layer in said gate line.