Semiconductor thin film and semiconductor device
First Claim
1. A semiconductor thin film comprising a collected body of a plurality of rod-like or flat-rod-like crystals each comprising silicon as a main component, wherein a main orientation plane substantially coincides with a {110} plane,wherein a concentration, in the semiconductor thin film, of each of carbon and nitrogen is 5×
- 1017 atoms/cm3 or less and a concentration of oxygen is 1×
1018 atoms/cm3 or less, respectively, andwherein the rod-like or flat-rod-like crystals contact each other while forming rotation angles having absolute values that are within 3°
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Accused Products
Abstract
After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.
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Citations
17 Claims
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1. A semiconductor thin film comprising a collected body of a plurality of rod-like or flat-rod-like crystals each comprising silicon as a main component, wherein a main orientation plane substantially coincides with a {110} plane,
wherein a concentration, in the semiconductor thin film, of each of carbon and nitrogen is 5× - 1017 atoms/cm3 or less and a concentration of oxygen is 1×
1018 atoms/cm3 or less, respectively, andwherein the rod-like or flat-rod-like crystals contact each other while forming rotation angles having absolute values that are within 3°
. - View Dependent Claims (2, 3, 4)
- 1017 atoms/cm3 or less and a concentration of oxygen is 1×
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5. A semiconductor device comprising a semiconductor film having at least a channel forming region, said semiconductor film comprising a collected body of a plurality of rod-like or flat-rod-like crystals each having silicon as a main component,
wherein a main orientation plane of the semiconductor thin film substantially coincides with a {110} plane, wherein a concentration, in the semiconductor thin film, of each of carbon and nitrogen is 5× - 1017 atoms/cm3 or less and a concentration of oxygen is 1×
1018 atoms/cm3 or less, andwherein the rod-like or flat-rod-like crystals contact each other while forming rotation angles having absolute values that are within 3°
. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12, 13)
- 1017 atoms/cm3 or less and a concentration of oxygen is 1×
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14. A semiconductor device comprising a semiconductor thin film having a main orientation plane substantially coinciding with a {110} plane,
wherein a concentration, in the semiconductor thin film, of each of carbon and nitrogen is 5× - 1017 atoms/cm3 or less and a concentration of oxygen is 1×
1018 atoms/cm3 or less, respectively,wherein an electron beam diffraction pattern of the semiconductor thin film has particular regularity due to {110} orientation, wherein each of diffraction spots of the electron beam diffraction pattern is substantially circular, and wherein a ratio of a minor-axis length to a major-axis length of each of the diffraction spots is in a range of 1/1 to 1/1.5. - View Dependent Claims (15)
- 1017 atoms/cm3 or less and a concentration of oxygen is 1×
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16. A semiconductor device comprising a semiconductor thin film comprising a main orientation plane substantially coinciding with a {110} plane,
wherein a concentration, in the semiconductor thin film, of each of carbon and nitrogen is 5× - 1017 atoms/cm3 or less and a concentration of oxygen is 1×
1018 atoms/cm3 or less, respectively,wherein an electron beam diffraction pattern of the semiconductor thin film has particular regularity due to {110} orientation, wherein each of diffraction spots of the electron beam diffraction pattern has a spread that is on a concentric circle having a center at a central point of an electron beam irradiation area, and wherein a tangential line to each of the diffraction spot from the central point of the electron beam irradiation area and a line segment connecting the central point of the electron beam irradiation area and a central point of the diffraction spot form an angle that is within ±
1.5°
. - View Dependent Claims (17)
- 1017 atoms/cm3 or less and a concentration of oxygen is 1×
Specification