Integrated circuit metallization with superconductor BEOL wiring

• US 6,087,711 A
• Filed: 02/17/1998
• Issued: 07/11/2000
• Est. Priority Date: 02/14/1997
• Status: Expired due to Term

• Current Assignee: Toshiba Corporation
• Original Assignee: Micron Technology, Inc.
• Inventors: Givens, John H.
• Primary Examiner(s): Saadat, Mahshid
• Assistant Examiner(s): Wilson, Allan R.
• Application Number:
  US09/024,234
• Time in Patent Office: 875 Days
• Field of Search: 257/37-39, 257/661-663, 257/758-760, 257/32, 257/33, 257/750
• US Class Current: 257/661
• CPC Class Codes: H01L 23/53285 containing superconducting materials
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10N 60/0661 Processes performed after copper oxide formation, e.g. patterning

Abstract

The present invention discloses an integrated circuit that is wired with a high-temperature superconductive material that is superconductive at temperatures of about 70° K and above, and methods of making the integrated circuit. The front-end manufactured semiconductor structure is patterned with a preferred precursor metal or metal oxide and a complementary compound is superposed and reacted to form wiring lines of superconductor ceramics that complete integrated circuits within the front-end manufactured semiconductor structure. The front-end manufactured semiconductor structure is alternatively patterned first with the complementary compound and the precursor metal is thinly patterned by ion implantation. The front-end manufactured semiconductor structure is then treated to form wiring lines of superconductor ceramics that complete integrated circuits within structure. The conductive lines, if formed within an oxidized portion of the complementary compound, are self-insulating by the presence of the oxided complementary compound. Operation of the devices is accomplished at "high" superconductive temperatures that cause improved solid state operation of the device, minimizing molecular vibrations and dislocation effects, and cause the wiring to be superconductive.

Claims

1. An integrated circuit comprising:

an electrically conductive structure situated upon a semiconductor substrate and within an insulating layer situated upon the semiconductor substrate;

a superconductive ceramic oxide layer that;

is superconductive at temperatures of about 150°

K and below;

is situated on the insulating layer;

is electrically connected with the electrically conductive structure;

is composed of a material including a compound and a metal oxide; and

is in contact with a layer composed of said compound.

2. The integrated circuit as defined in claim 1, wherein

the superconductive ceramic oxide layer is composed of a yttrium barium copper oxide superconductor;

the compound is composed of yttrium barium or the oxide thereof; and

the metal oxide is copper oxide.

3. The integrated circuit as defined in claim 1, wherein the superconductive ceramic oxide layer has a width of less than 0.1 μ

m and a thickness of less than 1000 Å

.

4. The integrated circuit as defined in claim 1, wherein the compound is superconductive when reacted with said metal oxide or the metal of said metal oxide.

5. The integrated circuit as defined in claim 1, wherein:

the electrically conductive structure is a gate; and

a conductive plug is in contact with the gate and extends to contact the superconductive ceramic oxide layer situated on the insulating layer.

26. The integrated circuit as defined in claim 1, wherein:

the superconductive ceramic oxide layer has opposing sides that make contact with said layer composed of said compound; and

said compound is superconductive when reacted with said metal oxide or the metal of said metal oxide.

6. An integrated circuit comprising:

an electrically conductive structure situated upon a semiconductor substrate and within an insulating layer situated upon the semiconductor substrate;

a yttrium barium copper oxide superconductor film that is superconductive at temperatures of about 150°

K and below and is situated upon the insulating layer; and

a layer composed of composed of yttrium barium or yttrium barium oxide in contact with the yttrium barium copper oxide superconductor film.

7. The integrated circuit as defined in claim 6, wherein the yttrium barium copper oxide superconductor film:

is electrically connected with the electrically conductive structure;

has a width of less than 0.1 μ

m; and

has a thickness of less than 1000 Å

.

8. The integrated circuit as defined in claim 6, further comprising:

a conductive plug in contact with the electrically conductive structure and extending to contact the yttrium barium copper oxide superconductor film situated on the insulating layer.

27. The An integrated circuit as defined in claim 6, wherein the yttrium barium copper oxide superconductor film has opposing sides that make contact with said layer composed of composed of yttrium barium or yttrium barium oxide.

9. An integrated circuit comprising:

an electrically conductive structure situated upon a semiconductor substrate and within a first insulating layer situated upon the semiconductor substrate;

a yttrium barium copper oxide superconductor film that is;

superconductive at temperatures of about 150°

K and below;

is situated on the first insulating layer;

is electrically connected with the electrically conductive structure;

has a width of less than 0.1 μ

m;

has a thickness of less than 1000 Å

; and

in contact with a layer composed of composed of yttrium barium or yttrium barium oxide;

a conductive plug in contact with the electrically conductive structure and extending to contact the yttrium barium copper oxide superconductor film situated on the insulating layer.

10. An integrated circuit comprising:

a gate on a semiconductor substrate in contact with an active area therein, the gate being within a first insulating layer situated upon the semiconductor substrate;

a first superconductive ceramic oxide layer composed of a superconductive ceramic oxide that is superconductive at temperatures of about 150°

K and below situated on the first insulating layer and being electrically connected with the gate; and

a compound layer in contact with the first superconductive ceramic oxide layer, wherein the compound layer is composed of a compound which is forms said superconductive ceramic oxide when reacted with a metal oxide or the metal of said metal oxide.

11. The integrated circuit as defined in claim 10, wherein:

the first superconductive ceramic oxide layer is composed of a yttrium barium copper oxide superconductor film; and

the compound layer is composed of yttrium barium or yttrium barium oxide.

12. The integrated circuit as defined in claim 10, wherein the first superconductive ceramic oxide layer has a width of less than 0.1 μ

m, and a thickness of less than 1000 Å

.

13. The integrated circuit as defined in claim 10, wherein a conductive plug is in contact with the gate and extends to contact the first superconductive ceramic oxide layer situated on the insulating layer.

14. The integrated circuit as defined in claim 10, wherein:

the first superconductive ceramic oxide layer is situated within a second insulating layer situated upon the first insulating layer;

a third insulating layer is situated upon the second insulating layer;

a second superconductive ceramic oxide layer that is superconductive at temperatures of about 150°

K and below is situated on the third insulating layer; and

a fourth insulating layer is situated upon the second superconductive ceramic oxide layer.

15. The integrated circuit as defined in claim 14, wherein said first and second superconductive ceramic oxide layers each comprise excess stoichiometric metal in the range of about 1 to about 10.

16. The integrated circuit as defined in claim 14, wherein at least one of the first and second superconductive ceramic oxide layers has a width of less than 0.1 μ

m, and a thickness of less than 1000 Å

.

17. The integrated circuit as defined in claim 15, wherein a conductive plug is in contact with the gate and extends to contact the first superconductive ceramic oxide layer situated on the first insulating layer.

28. The integrated circuit as defined in claim 15, further comprising a third superconductive ceramic oxide layer that is:

superconductive at temperatures of about 150°

K and below;

situated on the second superconductive ceramic oxide layer; and

within the fourth insulating layer.

18. An integrated circuit comprising:

a gate on a semiconductor substrate in contact with an active area therein, the gate being within a first insulating layer situated upon the semiconductor substrate;

a yttrium barium copper oxide superconductor film that;

is superconductive at temperatures of about 150°

K and below;

is situated on the first insulating layer;

is electrically connected with the gate;

has a width of less than 0.1 μ

m;

has a thickness of less than 1000 Å

; and

is in contact with a layer composed of composed of yttrium barium or yttrium barium oxide;

a conductive plug in contact with the gate and extending to contact the yttrium barium copper oxide superconductor film situated on the insulating layer.

19. An integrated circuit comprising:

a gate on a semiconductor substrate in contact with an active area in the semiconductor substrate, the gate being within a first insulating layer situated upon the semiconductor substrate;

a first superconductive ceramic oxide layer that is superconductive at temperatures of about 150°

K and below situated on the first insulating layer and being electrically connected with the gate, the first superconductive ceramic oxide layer being within a second insulating layer situated upon the first insulating layer;

a second superconductive ceramic oxide layer that is superconductive at temperatures of about 150°

K and below situated on both the first and second insulating layers; and

a third superconductive ceramic oxide layer that is superconductive at temperatures of about 150°

K and below situated on the second superconductive ceramic oxide layer.

20. The integrated circuit as defined in claim 19, wherein at least one of the first, second, and third superconductive ceramic oxide layers is composed of a yttrium barium copper oxide superconductor film.

21. The integrated circuit as defined in claim 19, wherein at least one of the first, second, and third superconductive ceramic oxide layers has a width of less than 0.1 μ

m, and a thickness of less than 1000 Å

.

22. The integrated circuit as defined in claim 19, wherein a conductive plug is in contact with the gate and extends to contact the first superconductive ceramic oxide layer situated on the first insulating layer.

29. The integrated circuit as defined in claim 19, wherein at least one of the first, second, and third superconductive ceramic oxide layers is:

composed of a material including a compound and a metal oxide; and

is in contact with a layer composed of said compound which is superconductive when reacted with said metal oxide or the metal of said metal oxide.

30. The integrated circuit as defined in claim 29, wherein:

said at least one of the first, second, and third superconductive ceramic oxide layers has opposing sides that make contact with said layer composed of said compound.

23. An integrated circuit comprising:

a gate on a semiconductor substrate in contact with an active area in the semiconductor substrate, the gate being within a first insulating layer situated upon the semiconductor substrate;

a first superconductive ceramic oxide layer that is superconductive at temperatures of about 150°

K and below situated on the first insulating layer and being electrically connected with the gate, the first superconductive ceramic oxide layer being within a second insulating layer situated upon the first insulating layer;

a second superconductive ceramic oxide layer that is superconductive at temperatures of about 150°

K and below situated on both the first and second insulating layers; and

a third superconductive ceramic oxide layer that is superconductive at temperatures of about 150°

K and below situated on the second superconductive ceramic oxide layer;

a conductive plug in contact with the gate and extending to contact the first superconductive ceramic oxide layer situated on the first insulating layer;

wherein at least one of the first, second, and third superconductive ceramic oxide layers is composed of a yttrium barium copper oxide superconductor film.

24. The integrated circuit as defined in claim 23, wherein at least one of the first, second, and third superconductive ceramic oxide layers is in contact with yttrium barium or yttrium barium oxide.

25. The integrated circuit as defined in claim 24, wherein:

said at least one of the first, second, and third superconductive ceramic oxide layers has opposing sides that make contact with said yttrium barium or yttrium barium oxide.

31. A metallized structure comprising:

a structure situated on a substrate assembly and having an upper surface;

a first layer upon the upper surface of the structure;

a compound upon the upper surface of the structure; and

a superconductive ceramic oxide that is superconductive at temperatures not more than 150°

K and is situated above the first layer of the compound, wherein;

either said first layer or said compound is composed of a metal or a metal oxide; and

the other of said first layer or said compound is in contact with the superconductive ceramic oxide and is superconductive when reacted with said metal or the oxide thereof.

32. The metallized structure as defined in claim 31, wherein:

the superconductive ceramic oxide is composed of a yttrium barium copper oxide superconductor film;

either said first layer or said compound is composed of copper or copper oxide; and

the other of said first layer or said compound is composed of yttrium barium or yttrium barium oxide.

33. The metallized structure as defined in claim 31, wherein:

the first layer is composed of said metal having a stoichiometric excess in the range of about 1 to about 10; and

the compound is superconductive when reacted with the first layer.

34. The metallized structure as defined in claim 31, wherein:

the first layer has a two dimensional shape; and

the superconductive ceramic oxide has the two dimensional shape of the first layer.

35. The metallized structure as defined in claim 31, wherein the superconductive ceramic oxide has:

a width of less than 0.1 microns; and

a thickness of less than 1000 angstroms.

36. The metallized structure as defined in claim 31, further comprising a plurality of multiple layers upon said substrate assembly, each said multiple layer comprising:

a base layer having an upper surface;

a secondary layer upon said upper surface of said base layer;

a compound upon said upper surface of the base layer; and

a superconductive ceramic oxide that is superconductive at temperatures not more than 150°

K, wherein;

either said secondary layer or said compound is composed of a metal or a metal oxide; and

the other of said secondary layer or said compound is in contact with the superconductive ceramic oxide and is superconductive when reacted with said metal or the oxide thereof.

37. The metallized structure as defined in claim 36, wherein:

the secondary layer of one of the multiple layers is composed of a different material than the secondary layer of another of the multiple layers;

the compound of one of the multiple layers is composed of a different material than the compound of another of the multiple layers.

38. The metallized structure as defined in claim 36, wherein the superconductive ceramic oxide of at least one multiple layer of said plurality of the multiple layers has:

a width of less than 0.1 microns; and

a thickness of less than 1000 angstroms.

39. The metallized structure as defined in claim 31, wherein:

the first layer is composed of a material selected from copper, barium, yttrium, rare earth metals, thallium, strontium, gold, silver, bismuth, their oxides, or combinations thereof; and

the compound is composed of a material that is complementary to the first layer in that said superconductive ceramic oxide is formed by reacting said material of the compound with the first layer.

40. The metallized structure as defined in claim 39, wherein the superconductive ceramic oxide is intermingled with an excess of said metal that is in a range from about 1 to about 3 stoichiometric.