Semiconductor integrated circuit having suppressed leakage currents
First Claim
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1. A semiconductor integrated circuit having a source power terminal, a ground terminal and an intermediate potential node, said semiconductor integrated circuit comprising:
- a main circuit connected between said source power terminal and said intermediate potential node, said main circuit having a MOSFET wherein an input signal for said MOSFET is applied to the gate and body of said MOSFET;
a reference potential generation circuit inserted between said source power terminal and said ground terminal, said reference potential generation circuit generating reference potential in accordance with the leakage current flowing through the junction of the body and the source electrode of said MOSFET; and
a control circuit connected between said intermediate potential node and said ground terminal, said control circuit having said reference potential applied thereto and controlling the voltage of said intermediate potential node in accordance with said reference potential.
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Abstract
A stable high-speed integrated circuit driven by a wide range of low voltages and consuming low power. A MOSFET is used wherein signals are applied to its gate and body for forming a circuit block which comprises a transistor network and at least one buffer circuit. Each buffer circuit has at least two configurations. A plurality of circuit blocks are formed on the same IC chip. Any of the configurations of the buffer circuit may be selected according to the magnitude of the capacitance of the load driven by the circuit block.
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Citations
9 Claims
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1. A semiconductor integrated circuit having a source power terminal, a ground terminal and an intermediate potential node, said semiconductor integrated circuit comprising:
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a main circuit connected between said source power terminal and said intermediate potential node, said main circuit having a MOSFET wherein an input signal for said MOSFET is applied to the gate and body of said MOSFET; a reference potential generation circuit inserted between said source power terminal and said ground terminal, said reference potential generation circuit generating reference potential in accordance with the leakage current flowing through the junction of the body and the source electrode of said MOSFET; and a control circuit connected between said intermediate potential node and said ground terminal, said control circuit having said reference potential applied thereto and controlling the voltage of said intermediate potential node in accordance with said reference potential. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor integrated circuit having a source power terminal, a ground terminal and an intermediate potential node, said semiconductor integrated circuit comprising
a main circuit connected between said source power terminal and said intermediate potential node, said main circuit having a MOSFET wherein an input signal for said MOSFET is applied to the gate and body of said MOSFET; -
a reference potential generation circuit inserted between said source power terminal and said ground terminal, said reference potential generation circuit generating reference potential in accordance with the leakage current flowing through the junction of the body and the source electrode of said MOSFET; and a control circuit connected between said intermediate potential node and said ground terminal, said control circuit controlling the voltage of said intermediate potential node in accordance with said reference potential.
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Specification