Semiconductor memory device
First Claim
Patent Images
1. A semiconductor memory device comprising:
- a memory cell array;
a memory control section for controlling data read/write with respect to said memory cell array;
a sequence control section for controlling a sequence operation for realizing a function of said memory control section; and
a function control section having at least one fuse circuit storing function control data used by said sequence control section to perform the sequence operation, said function control section executing a fuse sequence of pre-charging said fuse circuit, reading out the function control data after said fuse circuit is precharged, to obtain readout function control data, and latching the readout function control data, in response to at least one of operations including power-on operation and selection of a predetermined function.
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Accused Products
Abstract
A semiconductor memory device for a flash EEPROM includes MOS transistors, each used as a fuse element for storing function control data and having a stacked gate structure in which a floating gate and a control gate are stacked on each other, and a sequence control circuit for pre-charging the drain of a MOS transistor as a fuse element upon reception of a predetermined control signal, reading out data from the MOS transistor after the pre-charge operation, and latching the readout data.
43 Citations
27 Claims
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1. A semiconductor memory device comprising:
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a memory cell array; a memory control section for controlling data read/write with respect to said memory cell array; a sequence control section for controlling a sequence operation for realizing a function of said memory control section; and a function control section having at least one fuse circuit storing function control data used by said sequence control section to perform the sequence operation, said function control section executing a fuse sequence of pre-charging said fuse circuit, reading out the function control data after said fuse circuit is precharged, to obtain readout function control data, and latching the readout function control data, in response to at least one of operations including power-on operation and selection of a predetermined function. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor memory device comprising:
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a memory cell array; a memory control section which controls reading/writing data with respect to said memory cell array; a sequence control section for controlling a sequence operation for realizing a function of said memory control section; and a function control section for controlling a read/write of function control data used by said sequence control section to perform the sequence operation, and executing a read of data from said function control section at the time of power-on and selection of a predetermined function. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A semiconductor memory device comprising:
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a MOS transistor used as a fuse element for storing function control data and having a drain and a stacked gate structure in which a floating gate and a control gate are stacked on each other; and a sequence control circuit for pre-charging a drain of said MOS transistor upon reception of a predetermined control signal, reading out data from said MOS transistor after the drain of said MOS transistor is pre-charged, to obtain readout data, and latching the readout data, said sequence control circuit including a pre-charge circuit for pre-charging the drain of said MOS transistor at a predetermined timing for a predetermined period of time, a read circuit for reading out the function control data from said MOS transistor at a predetermined timing, a latch circuit for latching the data read out by said read circuit, and a fuse control circuit for sequentially generating a pre-charge signal for driving said pre-charge circuit, a readout control signal for driving said read circuit, and a latch signal for driving said latch circuit. - View Dependent Claims (26, 27)
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21. A semiconductor memory device comprising:
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a MOS transistor used as a fuse element for storing function control data and having a stacked gate structure in which a floating gate and a control gate are stacked on each other; and a sequence control circuit for pre-charging a drain of said MOS transistor upon reception of a predetermined control signal, reading out data from said MOS transistor after the drain of said MOS transistor is pre-charged, to obtain readout data, and latching the readout data, said sequence control circuit including a plurality of MOS transistors, a plurality of pre-charge circuits corresponding to said MOS transistors, a plurality of read circuits, a plurality of latch circuits, a plurality of fuse control circuits, a fuse selection circuit for generating a fuse selection signal for selecting one of said plurality of fuse control circuits in accordance with logic of external signals, and a fuse latch trigger circuit which is commonly arranged for said plurality of fuse control circuits, outputs a latch trigger signal upon reception of the predetermined control signal, and commonly supplies the latch trigger signal to said plurality of fuse control circuits, and wherein one of said fuse control circuits which is selected by the fuse selection signal generates a pre-charge signal for driving said pre-charge circuits, a readout control signal for driving said read circuits, and a latch signal for driving said latch circuits upon reception of the latch trigger signal. - View Dependent Claims (22, 23, 24, 25)
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Specification