System and method for an antifuse bank
First Claim
1. An antifuse bank for an integrated circuit, the antifuse bank comprising:
- a plurality of word and digit lines disposed to form an array;
a plurality of antifuse cells, each antifuse cell including;
an antifuse that is programmable from a first state to a second state;
an access device coupled to one of the word lines and one of the digit lines and coupled to the antifuse;
an addressing circuit coupled to the array that selects an antifuse of the array to be accessed;
a sensing circuit coupled to the array that senses the state of the selected antifuse; and
wherein the antifuse of each antifuse cell comprises a capacitive element, wherein the capacitance of the capacitive element does not exceed 25 nanofarads.
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Accused Products
Abstract
An antifuse bank (200) for an integrated circuit. The antifuse bank (200) includes a plurality of word lines (246) and digit lines (244) disposed to form an array. The antifuse bank (200) also includes a plurality of antifuse cells (230). Each antifuse cell (230) includes an antifuse (242) that is programmable to one of two fixed states. Each antifuse cell (230) also includes an access device (240) coupled to one of the word lines (246) and one of the digit lines (244) and coupled to the antifuse (242) of the antifuse cell (230). The antifuse bank (200) further includes an addressing circuit (248, 250) coupled to the array that selects an antifuse (242) of the array to be accessed. The antifuse bank (200) also includes a sensing circuit (228) coupled to the array that senses the state of the selected antifuse (242).
69 Citations
21 Claims
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1. An antifuse bank for an integrated circuit, the antifuse bank comprising:
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a plurality of word and digit lines disposed to form an array; a plurality of antifuse cells, each antifuse cell including; an antifuse that is programmable from a first state to a second state; an access device coupled to one of the word lines and one of the digit lines and coupled to the antifuse; an addressing circuit coupled to the array that selects an antifuse of the array to be accessed; a sensing circuit coupled to the array that senses the state of the selected antifuse; and wherein the antifuse of each antifuse cell comprises a capacitive element, wherein the capacitance of the capacitive element does not exceed 25 nanofarads.
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2. A method for reading data from a cell of an antifuse array, comprising the steps of:
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establishing a high voltage on a digit line with at least one long L device, wherein the digit line is coupled to the cell of the antifuse array; setting a common node of each cell to a second voltage; activating an access device of the cell; and monitoring the voltage on the digit line with a sensing circuit coupled to the digit line to determine the state of an antifuse of the cell.
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3. A memory device, comprising:
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an array of storage cells for storing data for the memory device; an address decoder coupled to the array of storage cells that selects a cell of the array to be accessed; and an array of antifuses that is coupled to provide data to the address decoder for use in selecting cells of the array of storage cells.
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4. A memory device, comprising:
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an array of storage cells for storing data for the memory device; an address decoder that is coupled to the array of storage cells to selectively access storage cells of the array; and an antifuse bank that is coupled to provide data to the address decoder for use in selecting storage cells of the array of storage cells, wherein the antifuse bank comprises; a plurality of word and digit lines disposed to form an array, a plurality of antifuse cells, each antifuse cell including; an antifuse that is programmable to one of two states, an access device coupled to one of the word lines and one of the digit lines and coupled to the antifuse, a word decoder and a digit decoder that are coupled to the word and digit lines that selects an antifuse of the array to be accessed, and a sensing circuit coupled to the digit lines that senses the state of the selected antifuse, wherein each sensing circuit comprises at least one transistor that is coupled to one of the digit lines to impose a first voltage on the digit line, wherein an antifuse cell coupled to the digit line overcomes the effect of the at least one transistor during a read operation when the antifuse of the cell is in a first state, thus producing a second voltage on the digit line. - View Dependent Claims (5, 6, 7, 8)
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9. A memory device, comprising:
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an array of storage cells for storing data for the memory device; an address decoder that is coupled to the array of storage cells to selectively access storage cells of the array; and an antifuse bank that is coupled to provide data to the address decoder for use in selecting storage cells of the array of storage cells, wherein the antifuse bank comprises; a plurality of word and digit lines disposed to form an array, a cell plate, a plurality of antifuse cells, each antifuse cell including; an access device coupled to one of the word lines and one of the digit lines, and an antifuse that is programmable from a first state to a second state, the antifuse having a first node coupled to the access device and a second node coupled to the cell plate, a word decoder and a digit decoder coupled to the array that selects an antifuse of the array to be accessed, and a sensing circuit coupled to the array that senses a voltage that indicates the state of the selected antifuse. - View Dependent Claims (10, 11, 12)
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13. A method for reading data from a selected cell of an antifuse array, comprising:
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establishing a high voltage on a digit line that is coupled to the selected cell; grounding the cell plate of the antifuse array; establishing a high voltage on the word line associated with the selected cell; and monitoring the voltage on the digit line with a sensing circuit coupled to the digit line to determine the state of the selected cell. - View Dependent Claims (14, 15)
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16. A method for testing unprogrammed cells of an antifuse array, comprising:
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grounding a cell plate which is a common node to each of he unprogrammed cells of the antifuse army; sequentially driving the word lines of the antifuse array to a high logic level; monitoring the voltage on the digit lines of the array; and identifying defective cells based on the monitored voltage of the digit lines. - View Dependent Claims (17, 18, 19, 20)
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21. A method for testing unprogrammed cells of an antifuse array, comprising:
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grounding a cell plate which is a common node to each of the unprogrammed cells of the antifuse array; sequentially driving the word lines of the antifuse array to a high logic level; monitoring the voltage on the digit lines of the array for low logic levels; identifying defective cells based on the monitored voltage of the digit lines; and grounding word lines associated with defective cells to isolate defective cells.
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Specification