Ring cavity type surface emitting semiconductor laser and fabrication method thereof

• US 6,088,378 A
• Filed: 04/27/1998
• Issued: 07/11/2000
• Est. Priority Date: 04/25/1997
• Status: Expired due to Term

• Current Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Original Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Inventors: Furukawa, Yukio
• Primary Examiner(s): Font, Frank G.
• Assistant Examiner(s): Inzirillo, Gioacchino
• Application Number:
  US09/067,003
• Time in Patent Office: 806 Days
• Field of Search: 372/92, 372/94, 372/96, 372/43
• US Class Current: 372/92
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/0207 Substrates having a special shape
• CPC Class Codes: H01S 5/02476 Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
• CPC Class Codes: H01S 5/1071 Ring-lasers
• CPC Class Codes: H01S 5/18305 with emission through the substrate, i.e. bottom emission
• CPC Class Codes: H01S 5/18316 Airgap confined
• CPC Class Codes: H01S 5/18352 Mesa with inclined sidewall
• CPC Class Codes: H01S 5/3202 grown on specifically orientated substrates, or using orientation dependent growth
• CPC Class Codes: H01S 5/32391 based on In(Ga)(As)P

Abstract

A surface emitting semiconductor laser of a ring cavity type with a small cavity loss includes a ring cavity or resonator which is constructed wituout using at least one of a pair of special high-reflection multi-layer mirrors and formed in a plane approximately perpendicular to its substrate. The ring cavity is built by a parallel face parallel to the substrate and at least one total reflection face formed opposed to the parallel face. The total reflection face may be a mesa-shaped semiconductor face, a polygonal cone-shaped semiconductor face, a quadrangular cone-shaped semiconductor, a circular cone-shaped semiconductor face or the like.

Claims

1. A surface emitting semiconductor laser comprising:

a substrate; and

a ring cavity formed in a plane substantially perpendicular to said substrate, said cavity including an active region.

2. A surface emitting semiconductor laser according to claim 1, wherein said ring cavity includes a parallel face parallel to said substrate and at least one total reflection face formed opposed to said parallel face.

3. A surface emitting semiconductor laser according to claim 2, wherein said total reflection face comprises a mesa-shaped semiconductor face.

4. A surface emitting semiconductor laser according to claim 2, wherein said total reflection face comprises a polygonal cone-shaped semiconductor face.

5. A surface emitting semiconductor laser according to claim 4, wherein said total reflection face comprises a quadrangular cone-shaped semiconductor face.

6. A surface emitting semiconductor laser according to claim 2, wherein said total reflection face comprises a circular cone-shaped semiconductor face.

7. A surface emitting semiconductor laser according to claim 1, wherein said substrate comprises a semiconductor substrate of a zinc blende crystalline structure, semiconductor layers including said active layer are grown on said semiconductor substrate, and said ring cavity comprises three reflection faces of (100), (111) and (111) faces, or (100), (111) and (111) faces, or three crystalline faces which are in an equivalent positional relationship with each of said three reflection faces when considering crystalline symmetry.

8. A surface emitting semiconductor laser according to claim 7, wherein said three reflection faces comprises a (100) face, and (111) and (111) faces created on opposite slant faces of a reverse mesa shape which is formed by performing a face-orientation-dependent etching to a semiconductor face of said semiconductor layers with a (100) face through a stripe-shaped mask formed on said semiconductor face extending in a <

011>

direction, or three crystalline faces which are in an equivalent positional relationship with said three faces when considering the crystalline symmetry.

9. A surface emitting semiconductor laser according to claim 7, wherein said three reflection faces comprise a (100) face, and (111) and (111) faces created on opposite slant faces of a forward mesa shape which is formed by performing a face-orientation-dependent etching to a semiconductor face of said semiconductor layers with a (100) face through a stripe-shaped mask formed on said semiconductor face extending in a <

011>

direction, or three crystalline faces which are in an equivalent positional relationship with said three faces when considering the crystalline symmetry.

10. A surface emitting semiconductor laser according to claim 7, wherein said three reflection faces comprises a (100) face, and (111) and (111) faces created on opposite slant faces of a forward mesa shape which is formed by performing a selective growth on a mask having a stripe-shaped opening, formed on a semiconductor face of said semiconductor layers with a (100) face and extending in a <

011>

direction, or three crystalline faces which are in an equivalent positional relationship with said three faces when considering the crystalline symmetry.

11. A surface emitting semiconductor laser according to claim 5, wherein said substrate comprises a semiconductor substrate of a zinc blende crystalline structure with a (100) face, semiconductor layers including said active layer are grown on said semiconductor substrate, and said quadrangular cone-shaped semiconductor face comprises (111), (111), (111) and (111) faces.

12. A surface emitting semiconductor laser according to claim 2, wherein said at least one total reflection face formed opposed to said parallel face comprises a face which is formed by performing an etching by projecting ion beams using an appropriately-shaped mask formed on said substrate.

13. A surface emitting semiconductor laser according to claim 12, wherein said at least one total reflection face formed opposed to said parallel face comprises a face which is formed by performing an etching by rotating said substrate about a normal thereto and projecting ion beams from a direction forming a predetermined angle relative to the normal, using an appropriately-shaped mask formed on said substrate.

14. A surface emitting semiconductor laser according to claim 2, wherein said parallel face comprises a total reflection semiconductor face.

15. A surface emitting semiconductor laser according to claim 2, wherein said parallel face comprises a multi-layer reflection face.

16. A surface emitting semiconductor laser according to claim 15, wherein said multi-layer reflection face comprises a dielectric multi-layer.

17. A surface emitting semiconductor laser according to claim 15, wherein said multi-layer reflection face comprises a semiconductor multi-layer.

18. A surface emitting semiconductor laser according to claim 17, wherein said multi-layer reflection face is formed on an n-side of said laser.

19. A surface emitting semiconductor laser according to claim 2, wherein said total reflection face is covered with a burying material.

20. A surface emitting semiconductor laser according to claim 19, wherein said total reflection face formed of semiconductor is covered, except a part thereof, with an insulating burying material whose index of refraction is smaller than the index of refraction of said semiconductor such that the total reflection condition is satisfied.

21. A surface emitting semiconductor laser according to claim 20, wherein said total reflection face is covered with said burying material, except a central portion thereof, and an electrode and said semiconductor are in an electric contact with each other at said central portion.

22. A surface emitting semiconductor laser according to claim 21, wherein said electrode is formed over all of said central portion of said total reflection face and said burying material.

23. A surface emitting semiconductor laser according to claim 19, wherein a heat sink is glued to said burying material with an adhesive.

24. A surface emitting semiconductor laser according to claim 19, wherein a relation of N₁ ·

sinθ

₁ >

N₀ is satisfied at said total reflection face, where N₁ is the index of refraction of said semiconductor in the inside of said total reflection face, N₀ is the index of refraction of material in the outside of said total reflection face and θ

₁ is the incident angle of light at said total reflection face, and a relation of N₂ ·

sinθ

₂ <

1 is satisfied at said parallel face parallel to said substrate, which is a multi-layer reflection face, where N₂ is the index of refraction of semiconductor of said multi-layer reflection face and θ

₂ is the incident angle of light at said parallel face parallel to said substrate.

25. A surface emitting semiconductor laser according to claim 19, wherein said burying material comprises dielectric material, and a predetermined region of said total reflection face is covered with said dielectric material by performing a step of forming a plate on a central portion of a semiconductor face of said total reflection face, a step of layering said dielectric material by using said plate as a mask and a step of removing the plate.

26. A surface emitting semiconductor laser according to claim 19, wherein said burying material comprises one of thermosetting resin and ultraviolet-radiation setting resin, and a predetermined region of said total reflection face is covered with said thermosetting resin or said ultraviolet-radiation setting resin by performing a step of forming said thermosetting resin or said ultraviolet-radiation setting resin on all of a semiconductor face of said total reflection face and a step of exposing a predetermined region of said semiconductor face by etching.

27. A surface emitting semiconductor laser according to claim 26, wherein said thermosetting resin or said ultraviolet-radiation setting resin contains thermally-conductive particles.

28. A surface emitting semiconductor laser according to claim 19, wherein said burying material comprises a material having a large thermal conductivity.

29. A surface emitting semiconductor laser according to claim 2, further comprising a light pick-out means for picking laser light out of said laser, said light pick-out means being brought into contact with said total reflection face and having a predetermined index of refraction such that evanescent waves generated at the time of total reflection at said total reflection face can be coupled to said light pick-out means as radiation mode or propagation mode.

30. A surface emitting semiconductor laser according to claim 29, wherein said light pick-out means comprises one of a lensed optical fiber, a slant-polished optical fiber and a minute prism.

31. A surface emitting semiconductor laser according to claim 2, further comprising a minute uneven portion formed on said reflection face, said minute uneven portion picking laser light out of said laser by using light scattering.

32. A surface emitting semiconductor laser according to claim 2, wherein said active region is formed near said total reflection face such that said active region is located along a light path of said ring cavity.