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Ring cavity type surface emitting semiconductor laser and fabrication method thereof

  • US 6,088,378 A
  • Filed: 04/27/1998
  • Issued: 07/11/2000
  • Est. Priority Date: 04/25/1997
  • Status: Expired due to Term
First Claim
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1. A surface emitting semiconductor laser comprising:

  • a substrate; and

    a ring cavity formed in a plane substantially perpendicular to said substrate, said cavity including an active region.

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