Plasma processing apparatus
First Claim
1. A plasma processing apparatus for processing a target substrate, using a plasma comprising:
- a process container forming an airtight process room;
a work table arranged in said process room and having a mount surface for supporting said target substrate;
a main exhaust for exhausting and setting said process room into a vacuum state;
an RF antenna for generating an electric field above said mount surface in said process room;
a power supply section for applying an RF power to said RF antenna; and
a main supply for supplying a process gas into said process room, at least part of said process gas being turned into said plasma by said electric field, wherein said main supply comprises a shower head arranged between said mount surface and said RF antenna to face said mount surface, and said shower head comprises a gas passage extending substantially parallel to said mount surface and a plurality of gas spouting holes opened toward said mount surface;
wherein said shower head is defined by a dielectric panel consisting essentially of a dielectric solid part and a hollow including said gas passage, and A2/(A1+A2) is set to be less than 0.4 where said solid part and said hollow have projected areas A1 and A2, respectively, on a planar outer-contour of said mount surface;
wherein said RF antenna comprises a loop portion surrounding a central position, which corresponds to a center of said work table, and a radial portion extending radially from said center position; and
wherein said gas passage comprises a pair of manifolds interposing said central position, and branches extending to connect said manifolds to each other and provided with said gas spouting holes, said manifolds being arranged substantially not to overlap said loop portion.
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Accused Products
Abstract
A plasma etching apparatus of the induction coupling type for processing an LCD substrate has a process container forming an airtight process room. A work table is arranged in the process room for supporting the LCD substrate. A vacuum pump is arranged for exhausting and setting the process room into a vacuum state. An antenna block having a plurality of dielectric layers is arranged to face the work table. An RF antenna is embedded in one of the dielectric layers of the antenna block for forming an electric field. A power supply is connected to the RF antenna for applying an RF power. The lowermost layer of the antenna block is formed as a shower head for supplying a process gas into the process room from a position between the RF antenna and the work table. At least part of the process gas is turned into plasma by the electric field. In the layer formed as the shower head, the gas passage has such a projected area ratio, on a planar outer-contour of the mount surface of the work table, that is from 15% to 25%.
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Citations
17 Claims
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1. A plasma processing apparatus for processing a target substrate, using a plasma comprising:
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a process container forming an airtight process room; a work table arranged in said process room and having a mount surface for supporting said target substrate; a main exhaust for exhausting and setting said process room into a vacuum state; an RF antenna for generating an electric field above said mount surface in said process room; a power supply section for applying an RF power to said RF antenna; and a main supply for supplying a process gas into said process room, at least part of said process gas being turned into said plasma by said electric field, wherein said main supply comprises a shower head arranged between said mount surface and said RF antenna to face said mount surface, and said shower head comprises a gas passage extending substantially parallel to said mount surface and a plurality of gas spouting holes opened toward said mount surface; wherein said shower head is defined by a dielectric panel consisting essentially of a dielectric solid part and a hollow including said gas passage, and A2/(A1+A2) is set to be less than 0.4 where said solid part and said hollow have projected areas A1 and A2, respectively, on a planar outer-contour of said mount surface; wherein said RF antenna comprises a loop portion surrounding a central position, which corresponds to a center of said work table, and a radial portion extending radially from said center position; and wherein said gas passage comprises a pair of manifolds interposing said central position, and branches extending to connect said manifolds to each other and provided with said gas spouting holes, said manifolds being arranged substantially not to overlap said loop portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification