Plasma processing apparatus

• US 6,089,182 A
• Filed: 09/30/1997
• Issued: 07/18/2000
• Est. Priority Date: 08/17/1995
• Status: Expired due to Fees

• Current Assignee: Litel Interconnect Incorporated
• Original Assignee: Tokyo Electron Limited
• Inventors: Hama, Kiichi
• Primary Examiner(s): Ahmad, Nasser
• Application Number:
  US08/940,980
• Time in Patent Office: 1,022 Days
• Field of Search: 118/723 R, 118/723 AN, 118/723 ER, 118/723 I, 118/723 IR, 156/345 P, 156/345 CS, 156/345 PW
• US Class Current: 118/723.00I
• CPC Class Codes: C23C 16/00 Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes reactive sputtering or vacuum evaporation C23C14/00
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

A plasma etching apparatus of the induction coupling type for processing an LCD substrate has a process container forming an airtight process room. A work table is arranged in the process room for supporting the LCD substrate. A vacuum pump is arranged for exhausting and setting the process room into a vacuum state. An antenna block having a plurality of dielectric layers is arranged to face the work table. An RF antenna is embedded in one of the dielectric layers of the antenna block for forming an electric field. A power supply is connected to the RF antenna for applying an RF power. The lowermost layer of the antenna block is formed as a shower head for supplying a process gas into the process room from a position between the RF antenna and the work table. At least part of the process gas is turned into plasma by the electric field. In the layer formed as the shower head, the gas passage has such a projected area ratio, on a planar outer-contour of the mount surface of the work table, that is from 15% to 25%.

Claims

1. A plasma processing apparatus for processing a target substrate, using a plasma comprising:

a process container forming an airtight process room;

a work table arranged in said process room and having a mount surface for supporting said target substrate;

a main exhaust for exhausting and setting said process room into a vacuum state;

an RF antenna for generating an electric field above said mount surface in said process room;

a power supply section for applying an RF power to said RF antenna; and

a main supply for supplying a process gas into said process room, at least part of said process gas being turned into said plasma by said electric field, wherein said main supply comprises a shower head arranged between said mount surface and said RF antenna to face said mount surface, and said shower head comprises a gas passage extending substantially parallel to said mount surface and a plurality of gas spouting holes opened toward said mount surface;

wherein said shower head is defined by a dielectric panel consisting essentially of a dielectric solid part and a hollow including said gas passage, and A2/(A1+A2) is set to be less than 0.4 where said solid part and said hollow have projected areas A1 and A2, respectively, on a planar outer-contour of said mount surface;

wherein said RF antenna comprises a loop portion surrounding a central position, which corresponds to a center of said work table, and a radial portion extending radially from said center position; and

wherein said gas passage comprises a pair of manifolds interposing said central position, and branches extending to connect said manifolds to each other and provided with said gas spouting holes, said manifolds being arranged substantially not to overlap said loop portion.

2. The apparatus according to claim 1, wherein said A2/(A1+A2) is set to fall in a range of from 0.15 to 0.25.

3. The apparatus according to claim 1, wherein, in a planar layout relative to said mount surface of said work table, said gas passage and said RF antenna are arranged to be substantially line-symmetric or point-symmetric relative to said central portion.

4. The apparatus according to claim 1, wherein said gas passage comprises a plurality of branches, only at ends of which said gas spouting holes are arranged, and said gas passage has a substantially equal conductance from an inlet to said gas spouting holes.

5. The apparatus according to claim 4, wherein said branches have substantially equal cross-sectional areas, and said gas passage is substantially equal in length from said inlet to said gas spouting holes.

6. The apparatus according to claim 1, comprising an antenna block arranged in contact with an inner surface of said process room and facing said mount surface, said RF antenna being arranged in said antenna block.

7. The apparatus according to claim 6, wherein said dielectric panel defining said shower head constitutes an opposite wall of dielectric of said antenna block, which is present between said mount surface and said RF antenna to face said mount surface.

8. The apparatus according to claim 7, wherein said antenna block comprises an embedding layer of dielectric other than said opposite wall, said RF antenna being embedded in said embedding layer.

9. The apparatus according to claim 8, wherein said antenna block comprises a substantially solid body between said inner surface of said process room in contact with said antenna block and said embedding layer.

10. The apparatus according to claim 7, wherein said antenna block forms a hollow and airtight antenna room, and said apparatus comprises an auxiliary exhaust for exhausting and setting said antenna room into a vacuum state.

11. The apparatus according to claim 10, comprising a pressure controller connected to said auxiliary exhaust for maintaining a difference in pressures between said process and antenna rooms smaller than a certain value.

12. The apparatus according to claim 1, wherein said process container consists essentially of a conductive material.

13. The apparatus according to claim 12, further comprising grounding means for grounding said container.

14. The apparatus according to claim 1, wherein said loop portion of said RF antenna comprises an outer loop arranged around said radial portion, and said manifolds and said branches of said gas passage are arranged inside said outer loop so as not to overlap said outer loop.

15. The apparatus according to claim 14, wherein said RF antenna comprises an inner loop surrounding said central position and connected to said outer loop through said radial portion, and said manifolds of said gas passage are arranged outside said inner loop so as not to overlap said inner loop.

16. The apparatus according to claim 14, wherein said gas passage comprises a pair of inlets respectively connecting said manifolds to a source of said process gas, and said gas passage overlaps said outer loop only at said inlets.

17. The apparatus according to claim 1, wherein said inlets extend substantially perpendicularly across said outer loop.