Cleaning method using ammonium persulphate to remove slurry particles from CMP substrates

• US 6,090,214 A
• Filed: 06/22/1998
• Issued: 07/18/2000
• Est. Priority Date: 06/22/1998
• Status: Expired due to Fees

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Roman, James J., Zhou, Dashun Steve, Beilin, Solomon I.
• Primary Examiner(s): Gulakowski, Randy
• Assistant Examiner(s): CHAUDHRY, SAEED T
• Application Number:
  US09/102,970
• Time in Patent Office: 757 Days
• Field of Search: 134/6, 134/7, 134/32, 134/34, 134/902
• US Class Current: 134/6
• CPC Class Codes: B08B 1/32 using rotary cleaning members
• CPC Class Codes: B08B 6/00 Cleaning by electrostatic means domestic cleaning implements functioning electrostatically A47L13/40; cleaning of grooved record carriers G11B3/58
• CPC Class Codes: C11D 2111/16 Metals
• CPC Class Codes: C11D 3/3942 Inorganic per-compounds C11D3/3902 takes precedence

Abstract

A chemical mechanical cleaning method utilizes an ammonium persulphate solution with simultaneous mechanical brushing to remove residual slurry particles from copper surfaces. The pH of the solution is selected to electrostatically repel charged slurry particles from the copper surface.

Claims

1. A method of cleaning a slurry residue from a surface of a copper layer, the copper layer disposed on a substrate which has been polished with a slurry composed of abrasive particles, comprising the steps of:

a) bringing a brush into contact with the surface of the substrate;

b) providing a relative motion between said brush and said substrate;

c) exposing the substrate to a rinse solution comprising de-ionized water and ammonium persulphate while the substrate is in contact with said brush; and

d) continuing step "c" until the slurry residue is removed from the copper layer;

wherein the composition of the rinse solution is selected to undercut the abrasive particles residing on the surface of the copper layer and the pH of the rinse solution is selected so that the abrasive particles do not electrostatically cling to the surface of the copper layer.

2. The method of claim 1, wherein said rinse solution comprises not more than a 7% by weight solution of ammonium persulphate.

3. The method of claim 1, wherein said rinse solution has a pH in the range of ten to thirteen.

4. The method of claim 1, wherein the copper layer has an average thickness relative to the substrate, and wherein the substrate is exposed in step "d" to said rinse solution for a period of time which decreases said average thickness by less than one-fourth of said average thickness of said copper layer.

5. The method of claim 1, wherein said abrasive particles have an average diameter, and wherein the substrate is exposed in step "d" to said rinse solution for a period of time which etches the copper layer by a thickness that is less than one-fourth of said average particle diameter of said abrasive particles.

6. The method of claim 1, wherein the substrate is exposed in step "d" to said rinse solution for a period of time which reduces the thickness of the copper layer by an amount that is less than 0.2 microns.

7. The method of claim 1, wherein said rinse solution is sprayed onto the surface of the substrate.

8. The method of claim 1, wherein the brush is rotated while the substrate is cleansed.

9. A method of cleaning residual slurry particles from a copper metallization layer disposed on a substrate which has been polished, comprising the steps of:

a) selecting a rinse solution having an ammonium persulphate concentration such that the rinse solution etches the copper metallization layer at a preselected rate, thereby undercutting the slurry particles;

b) selecting a rinse cycle time;

c) adjusting the pH of the rinse solution such that the slurry particles are electrostatically repelled from the surface of the copper metallization layer;

d) bringing a brush into proximity with the surface of the substrate;

e) adjusting the position of the brush such that the brush is in physical contact with the substrate;

f) providing a relative motion between the brush and the substrate such that the brush couple mechanical energy to the slurry particles on the surface of the copper metallization layer; and

g) exposing the substrate to the rinse solution during the rinse cycle time while the brush couples mechanical energy to the surface of the copper metallization layer;

whereby the slurry particles are removed from the surface of said copper metallization layer.

10. The method of claim 9, wherein the slurry particles are comprised of alumina.

11. The method of claim 9 wherein the slurry particles are comprised of silica.

12. The method of claim 9, wherein the ammonium persulphate concentration of the rinse solution and the rinse cycle time are selected such that the thickness of the copper metallization layer is reduced by less than 0.2 microns.

13. The method of claim 9, wherein the ammonium persulphate concentration of the rinse solution and the rinse cycle time are selected such that less than about one quarter of the thickness of the copper metallization layer is removed.

14. The method of claim 9, wherein the slurry particles have a mean diameter, and wherein the ammonium persulphate concentration of the rinse solution and the rinse cycle time are selected such that the thickness of the copper metallization layer is reduced by an amount that is less than about one-fourth of said mean diameter of the slurry particles.

15. A chemical mechanical method of cleaning embedded slurry particles from a copper metallization layer disposed on a substrate after a polishing process, comprising the steps of:

a) selecting a rinse solution such that the rinse solution etches the copper metallization layer at a controlled rate;

b) selecting a rinse cycle time such that the rinse solution undercuts the embedded slurry particles and the thickness of the copper metallization layer is substantially preserved;

c) adjusting the pH of the rinse solution such that the slurry particles do not electrostatically cling to the surface of the copper metallization layer;

d) bringing a brush into proximity with the surface of the substrate;

e) adjusting the position of the brush such that the brush is in physical contact with the substrate;

f) providing a relative motion between the brush and the substrate; and

g) exposing the substrate to the rinse solution during the rinse cycle time while the brush couples mechanical energy to the surface of the substrate;

whereby the embedded slurry particles are cleaned from said copper metallization layer and the thickness of said copper metallization layer is substantially preserved.

16. The method of claim 15, wherein the rinse solution is composed of an ammonium persulphate solution having an ammonium persulphate concentration selected such that the thickness of the copper metallization layer is reduced by less than 0.2 microns.

17. The method of claim 15, wherein the rinse solution is composed of an ammonium persulphate solution having an ammonium persulphate concentration selected such that less than about one quarter of the thickness of the copper metallization layer is removed.

18. The method of claim 15, wherein the pH of the rinse solution is selected so that the slurry particles are electrostatically repelled from the surface of the copper metallization layer.