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Surface treatment of semiconductor substrates

  • US 6,090,217 A
  • Filed: 12/09/1998
  • Issued: 07/18/2000
  • Est. Priority Date: 12/09/1998
  • Status: Expired due to Term
First Claim
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1. A process for drying a substrate comprising the steps of:

  • supporting the substrate within a foam treatment vessel causing the supported substrate to be submerged in a solution of carbon dioxide in deionized water under pressure within said foam treatment vessel;

    thereafter gradually reducing the pressure within the foam treatment vessel, thereby causing carbon dioxide bubbles to form a foam layer on the surface of the solution; and

    ,while gradually reducing the pressure within the foam treatment vessel, causing the foam layer to move relative to the substrate so that the substrate Passes through the foam layer, in moving contact therewith, into a gaseous atmosphere.

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