Ion-implantation assisted wet chemical etching of III-V nitrides and alloys

• US 6,090,300 A
• Filed: 05/26/1998
• Issued: 07/18/2000
• Est. Priority Date: 05/26/1998
• Status: Expired due to Term

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Walker, Jack, Johnson, Noble M., Bour, David P., Goetz, Werner, Paoli, Thomas L.
• Primary Examiner(s): Nuzzolillo, Maria
• Assistant Examiner(s): Ruthkosky, Mark
• Application Number:
  US09/084,223
• Time in Patent Office: 784 Days
• Field of Search: 216/65, 216/2, 216/67, 445/35, 445/50, 438/33, 438/46, 438/18, 156/643.1, 156/662.1
• US Class Current: 216/2
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01S 5/2081 using special etching techniques
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

A process for etching III-V nitride and III-V nitride alloy materials first implants selected regions of the materials with ions and then selectively etches the implanted regions in an etching liquid, such as an aqueous base. The etch depth is controlled by the energy, mass and dose of the implanted ions.

Claims

1. An etching process comprising:

implanting ions at selected regions of a film comprising at least one of a III-V nitride and a III-V nitride alloy to form an ion implanted film, the III-V nitride being a nitride formed from elements of Group III and Group V of the periodic table and the III-V nitride alloy being a nitride alloy formed from elements of Group III and Group V of the periodic table; and

selectively etching the selected regions of the ion implanted film with an etching liquid.

2. The etching process according to claim 1, wherein the step of implanting ions comprises implanting ions at selected regions of a non-implanted film comprising at least one of a III-V nitride and a III-V nitride alloy, the III-V nitride being a nitride formed from elements of Group III and Group V of the periodic table and the III-V nitride alloy being a nitride alloy formed from elements of Group III and Group V of the periodic table.

3. The etching process according to claim 1, wherein the III-V nitride is gallium nitride and the III-V nitride alloy is aluminum gallium indium nitride.

4. The etching process according to claim 1, wherein the film is not doped with p-type dopants or n-type dopants.

5. The etching process according to claim 1, wherein the film is doped p-type or n-type.

6. The etching process according to claim 2, wherein a portion of the non-implanted film is protected from ion implantation by a mask.

7. The etching process according to claim 6, wherein the mask is a layer of photoresist on a surface of the non-implanted film.

8. The etching process according to claim 2, wherein the step of implanting comprises directing an ion beam to the non-implanted film.

9. The etching process according to claim 8, wherein the step of implanting comprises focusing an ion beam on the non-implanted film.

10. The etching process according to claim 2, wherein the step of implanting implants at least one of an elemental ion and a molecular ion in the non-implanted film.

11. The etching process according to claim 10, wherein the elemental ion is selected from the group consisting of Al, Ga, In, Si, O, N, Mg, Zn, ² H, H and He ions.

12. The etching process according to claim 2, wherein the step of implanting implants ions having an ion energy from about 5 keV to about 5000 keV in the non-implanted film.

13. The etching process according to claim 12, wherein the step of implanting implants ions having an ion energy from about 75 keV to about 200 keV in the non-implanted film.

14. The etching process according to claim 2, wherein the step of implanting implants ions in the non-implanted film to a dose of between about 10¹¹ ions/cm² and about 10¹⁸ ions/cm².

15. The etching process according to claim 14, wherein the dose is between about 10¹⁴ ions/cm² and about 10¹⁵ ions/cm².

16. The etching process according to claim 2, wherein a first region of the non-implanted film is implanted with ions having a first energy, mass and dose;

a second region of the non-implanted film is adjacent to the first region of the non-implanted film;

the second region of the non-implanted film is implanted with ions having a second energy, mass and dose; and

at least one of the second energy, mass and dose is different from the respective first energy, mass and dose.

17. The etching process according to claim 1, wherein the etching liquid comprises an aqueous base.

18. The etching process according to claim 17, wherein the aqueous base comprises at least one of aqueous sodium hydroxide and aqueous potassium hydroxide.

19. The etching process according to claim 1, wherein the etching liquid is at or above a temperature of about 25°

C.

20. The etching process according to claim 19, wherein the etching liquid is at a temperature between about 25°

C. and about 400°

C.

21. an etching process, comprising:

providing an ion implanted film comprising at least one of gallium nitride and aluminum gallium indium nitride; and

etching the ion implanted film with an etching liquid.