Method and apparatus for monitoring plasma processing operations
First Claim
1. A method for monitoring a plasma process comprising a first plasma step, said method comprising the steps of:
- generating a plasma in said processing chamber;
performing said first plasma step using said generating step, wherein there is a first endpoint of said first plasma step which is when said first plasma step has produced a first predetermined result;
monitoring said performing step to identify an occurrence of said first endpoint, wherein said monitoring step comprises using a first technique comprising the steps of;
obtaining optical emissions of said plasma in said processing chamber within a first wavelength range extending from 250 nanometers to about 1,000 nanometers, from at least a plurality of different times during said performing step, and at least at every 1 nanometer throughout said first wavelength range;
comparing said optical emissions at each of said plurality of different times with a first output; and
determining when said optical emissions from at least one of said plurality of different times is within a predetermined amount of said first output and equating this with said first endpoint.
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Accused Products
Abstract
The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber. Plasma health evaluations and process identification through optical emissions analysis are included in this aspect. Yet another aspect associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma recipe, plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasma step of a multiple step plasma recipe). A final aspect associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility, such as the distribution of wafers to a wafer production system.
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Citations
14 Claims
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1. A method for monitoring a plasma process comprising a first plasma step, said method comprising the steps of:
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generating a plasma in said processing chamber; performing said first plasma step using said generating step, wherein there is a first endpoint of said first plasma step which is when said first plasma step has produced a first predetermined result; monitoring said performing step to identify an occurrence of said first endpoint, wherein said monitoring step comprises using a first technique comprising the steps of; obtaining optical emissions of said plasma in said processing chamber within a first wavelength range extending from 250 nanometers to about 1,000 nanometers, from at least a plurality of different times during said performing step, and at least at every 1 nanometer throughout said first wavelength range; comparing said optical emissions at each of said plurality of different times with a first output; and determining when said optical emissions from at least one of said plurality of different times is within a predetermined amount of said first output and equating this with said first endpoint. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification