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GaN LEDs with improved output coupling efficiency

  • US 6,091,085 A
  • Filed: 02/19/1998
  • Issued: 07/18/2000
  • Est. Priority Date: 02/19/1998
  • Status: Expired due to Term
First Claim
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1. An LED comprising:

  • a substrate having a top surface;

    a first layer of a semiconducting material deposited on said substrate;

    a second layer of said semiconducting material, said first and second layers forming a p-n diode;

    a light generation region between said first and second layers for generating light when a potential is applied across said first and second layers;

    a first contact comprising a conducting layer deposited on said second layer; and

    a second contact connected electrically to said first layer,wherein one of said top surface of said substrate and said surface of said second layer that is not in contact with said first layer includes protrusions and/or depressions for scattering light.

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