Semiconductor devices
First Claim
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1. A semiconductor trench device, comprising:
- an active region having at least one trench extending from a first surface thereof with at least one p-n junction across which current flow is controllable by a field effect gate electrode disposed at a wall region of said at least one trench, said gate electrode being operative to produce an inversion layer in a first semiconductor region of a first conductivity type, at least a bottom portion of said at least one trench remote from said first surface being positioned in said first semiconductor region, said first region being adjacent a second semiconductor region of a second conductivity type, said second region being located between said first region and an anode region which is of said first conductivity type, said gate electrode being operative, in use, to cause said inversion layer to initiate carrier injection into said first and second regions, thereby producing a thyristor action in which the inversion layer, while it is present, acts as an emitter thereof.
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Abstract
An Insulated Gate Bipolar Transistor has a gate in the form of a trench positioned in a p region in a silicon body. The device operates in a thyristor mode having a virtual emitter which is formed during operation by the generation of an inversion layer at the bottom of the trench within the p region. The device is inherently safe and turns off rapidly as removal of a gate signal collapses the emitter. As the trench gate is situated within the p region, it can withstand high voltages when turned off as the reverse electric field is prevented from reaching the trench gate.
25 Citations
24 Claims
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1. A semiconductor trench device, comprising:
- an active region having at least one trench extending from a first surface thereof with at least one p-n junction across which current flow is controllable by a field effect gate electrode disposed at a wall region of said at least one trench, said gate electrode being operative to produce an inversion layer in a first semiconductor region of a first conductivity type, at least a bottom portion of said at least one trench remote from said first surface being positioned in said first semiconductor region, said first region being adjacent a second semiconductor region of a second conductivity type, said second region being located between said first region and an anode region which is of said first conductivity type, said gate electrode being operative, in use, to cause said inversion layer to initiate carrier injection into said first and second regions, thereby producing a thyristor action in which the inversion layer, while it is present, acts as an emitter thereof.
- View Dependent Claims (17, 19, 20)
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2. A semiconductor trench device, comprising:
- an active region having at least one trench extending from a first surface thereof with at least one p-n junction across which current flow is controllable by a field effect gate electrode disposed at a wall region of said at least one trench, said gate electrode being operative to produce an inversion layer in an adjacent first p-type region, at least a bottom portion of said at least one trench remote from said first surface being positioned in said first p-type region, said first p-type region being adjacent an n-type region which is located between said first p-type region and an anode second p-type region, said gate electrode being operative, in use, to form the inversion layer adjacent thereto in dependence on a potential applied thereto, thereby causing electron injection into said first p-type region and said n-type region and a thyristor action in which the inversion layer, while it is present, acts as an emitter thereof.
- View Dependent Claims (18, 21, 22)
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3. A semiconductor trench device, comprising:
- an active region having at least one trench extending from a first surface thereof with at least one p-n junction across which current flow is controllable by a field effect gate electrode disposed at a wall region of said at least one trench, said gate electrode being operative to produce an inversion layer in an adjacent first p-type region, at least a bottom portion of said at least one trench remote from said first surface being positioned in said first p-type region, said first p-type region being adjacent a first n-type region which is located between said first p-type region and an anode second p-type region, said gate electrode being operative, in use, to form the inversion layer adjacent thereto in dependence on a potential applied thereto, thereby causing electron injection into said first p-type and said first n-type regions and current flow to said anode second p-type region while, and only while, said inversion layer is maintained by a field effect of said gate electrode.
- View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 23, 24)
Specification