Method for measuring the electrical potential in a semiconductor element
First Claim
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1. A method of measuring an electrical potential distribution in a semiconductor element, comprising the steps of:
- (a) applying at least one voltage over said semiconductor element;
(b) placing at least one conductor in contact with said semiconductor element using a scanning proximity microscope while injecting a substantially zero current in said semiconductor element with said conductor;
(c) measuring the electrical potential on said conductor while injecting a substantially zero current in said semiconductor element with said conductor;
(d) changing the position of said conductor; and
(e) repeating steps (c) and (d).
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Abstract
Measuring an electrical potential in a semiconductor element by applying one or more voltages over the semiconductor element, placing at least one conductor in contact with the semi-conductor element using a scanning proximity microscope while injecting a substantially zero current in the semiconductor element with the conductor, measuring an electrical potential in the conductor while injecting a substantially zero current in the semiconductor element with the conductor, changing the position of the conductor, and repeating the measuring and changing steps.
40 Citations
31 Claims
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1. A method of measuring an electrical potential distribution in a semiconductor element, comprising the steps of:
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(a) applying at least one voltage over said semiconductor element; (b) placing at least one conductor in contact with said semiconductor element using a scanning proximity microscope while injecting a substantially zero current in said semiconductor element with said conductor; (c) measuring the electrical potential on said conductor while injecting a substantially zero current in said semiconductor element with said conductor; (d) changing the position of said conductor; and (e) repeating steps (c) and (d). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A method of measuring an electrical potential distribution in a semiconductor element, comprising the steps of:
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(a) applying at least one voltage over said semiconductor element; (b) placing at least one conductor in contact with said semiconductor element using a scanning proximity microscope while injecting a substantially zero current in said semiconductor element with said conductor, thereby establishing a contact force between said conductor and said semiconductor element; (c) calibrating said contact force between said conductor and said semiconductor element to thereby obtain a calibrated contact force; and
thereafter(d) holding said conductor in contact with said semiconductor element while establishing said calibrated contact force between said conductor and said semiconductor element; (e) measuring the electrical potential on said conductor while injecting a substantially zero current in said semiconductor element with said conductor; (f) changing the position of said conductor; and (g) repeating steps (e) and (f).
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29. A method of measuring an electrical potential distribution in a semiconductor element, comprising the steps of:
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(a) applying at least one voltage over said semiconductor element; (b) placing at least one conductor in contact with said semiconductor element using a scanning proximity microscope while injecting a substantially zero current in said semiconductor element with said conductor; (c) measuring the electrical potential on said conductor while injecting a substantially zero current in said semiconductor element with said conductor; (d) changing the position of said conductor; (e) repeating steps (c) and (d); (f) monitoring a contact parameter while executing steps (b)-(e); (g) calibrating said contact parameter, thereby obtaining at least one calibrated contact parameter value; (h) executing steps (b)-(e) at said calibrated contact parameter value; (i) establishing a relation between said electrical potential and a characteristic of said semiconductor; (j) mapping the electrical potential distribution in said semiconductor element; and (k) converting said potential distribution to said characteristic using said relation. - View Dependent Claims (30, 31)
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Specification