Microfabrication process for enclosed microstructures
First Claim
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1. A process for fabrication of subsurface structures comprising:
- producing, on a surface of a substrate, a mask having a pattern defining the location and configuration of a subsurface cavity to be formed;
vertically etching said substrate through said mask pattern to produce in said substrate at least one via channel corresponding to said pattern;
isotropically etching said substrate through said via channel to produce within said substrate and below the surface thereof said subsurface cavity; and
etching said substrate around said cavity and said via channel to produce a structure which is at least partially released from said substrate and which contains said cavity.
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Abstract
A single-mask process for fabricating enclosed, micron-scale subsurface cavities in a single crystal silicon substrate includes the steps of patterning the substrate to form vias, etching the cavities through the vias, and sealing the vias. Single cavities of any configuration may be produced, but a preferred embodiment includes closely spaced cavity pairs. The cavities may be separated by a thin membrane, or may be merged to form an enlarged merged cavity having an overhanging bar to which electrical leads may be connected. A three-mask process for fabricating enclosed cavities with electrical contacts and electrical connections is also disclosed.
192 Citations
31 Claims
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1. A process for fabrication of subsurface structures comprising:
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producing, on a surface of a substrate, a mask having a pattern defining the location and configuration of a subsurface cavity to be formed; vertically etching said substrate through said mask pattern to produce in said substrate at least one via channel corresponding to said pattern; isotropically etching said substrate through said via channel to produce within said substrate and below the surface thereof said subsurface cavity; and etching said substrate around said cavity and said via channel to produce a structure which is at least partially released from said substrate and which contains said cavity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A process for the fabrication of subsurface structures, comprising:
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forming in the surface of a substrate an elongated via channel having a width sufficiently large to permit isotropic etching of the substrate through the via channel; isotropically etching the substrate below the via channel to produce an elongated cavity within the substrate; and at least partially releasing an elongated beam within said substrate and containing said elongated cavity. - View Dependent Claims (28, 29, 30, 31)
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Specification