Apparatus for and methods of implanting desired chemical species in semiconductor substrates
First Claim
1. Apparatus for implanting a desired chemical species in a semiconductor substrate comprisinga target chamber,a holder to hold a substrate in the target chamber for implantation,a pump to pump the target chamber down to a desired pressure,a pressure lock to enable a substrate to be passed into the target chamber for loading on the holder while the target chamber is at sub-atmospheric pressure,an ion beam generator for generating and directing a beam of ions containing said desired species at a surface of a substrate on said holder,and a reactive gas supply to feed a reactive gas into the target chamber while the chamber is maintained by the pump at the desired pressure, to provide a desired partial pressure of the reactive gas in the target chamber to react with and volatilise unwanted contaminants on surfaces in the target chamber.
1 Assignment
0 Petitions
Accused Products
Abstract
An apparatus and method for implanting a desired chemical species in a semiconductor substrate. The apparatus comprises a target chamber, a holder to hold a substrate in the target chamber for implantation, a pump to pump the target chamber down to a desired pressure, a pressure lock to enable a substrate to be passed into the target chamber for loading on the holder while the target chamber is at sub-atmospheric pressure, an ion beam generator for generating and directing a beam of ions containing said desired species at a surface of a substrate on said holder, and a reactive gas supply to feed a reactive gas into the target chamber while the chamber is maintained by the pump at the desired pressure, to provide a desired partial pressure of the reactive gas in the target chamber to reactive with and volatilise unwanted contaminants on surfaces in the target chamber.
70 Citations
19 Claims
-
1. Apparatus for implanting a desired chemical species in a semiconductor substrate comprising
a target chamber, a holder to hold a substrate in the target chamber for implantation, a pump to pump the target chamber down to a desired pressure, a pressure lock to enable a substrate to be passed into the target chamber for loading on the holder while the target chamber is at sub-atmospheric pressure, an ion beam generator for generating and directing a beam of ions containing said desired species at a surface of a substrate on said holder, and a reactive gas supply to feed a reactive gas into the target chamber while the chamber is maintained by the pump at the desired pressure, to provide a desired partial pressure of the reactive gas in the target chamber to react with and volatilise unwanted contaminants on surfaces in the target chamber.
-
9. A method of implanting a desired chemical species in a semiconductor substrate comprising
holding said substrate in an evacuated target chamber, directing a beam of ions containing said desired species at a surface of said substrate, and providing a predetermined partial pressure of a reactive gas in said target chamber.
-
12. A method of implanting a desired chemical species in a semiconductor substrate comprising
pumping down a target chamber to a desired pressure, introducing a predetermined partial pressure of a reactive gas into said target chamber, loading a substrate to be implanted into the target chamber through a pressure lock, and directing a beam of ions containing said desired species at a surface of said substrate.
Specification