Modified dual damascene process
First Claim
1. A method of fabricating a metal structure, on a semiconductor substrate, with the metal structure featuring a wide, metal shape, on underlying, narrow metal shape, comprising the steps of:
- providing a first metal interconnect structure, located in an opening in a first insulator layer;
depositing a first silicon nitride layer, a second insulator layer, and a second silicon nitride layer, on the top surface of said first metal interconnect structure, and on the top surface of said first insulator layer;
patterning of said second silicon nitride layer, to form silicon nitride islands, with narrow spaces between said silicon nitride islands, exposing a portion of the top surface of underlying, said second insulator layer;
depositing a third insulator layer;
forming a photoresist shape, on said third insulator layer, featuring a wide opening in said photoresist shape, exposing a portion of the top surface of said third insulator layer;
performing a selective, first dry etching procedure, using said wide opening, in said photoresist shape as a mask, to create a wide diameter opening, in said third insulator layer, exposing a portion of said silicon nitride islands, and exposing a narrow space, located between said silicon nitride islands, then continuing said selective, first dry etching procedure, to create a narrow diameter opening in said second insulator layer, using portions of said silicon nitride islands, exposed in said wide diameter opening, as a mask, to create a narrow diameter opening in said second insulator layer, exposing a portion of said first silicon nitride layer, located at the bottom of said narrow diameter opening;
performing a selective, second dry etching procedure, to remove portion of said first silicon nitride layer, located at the bottom of said narrow diameter opening, exposing a portion of the top surface of said first metal interconnect structure, and removing portions of said silicon nitride islands, exposed in said wide diameter opening; and
forming said metal structure, comprised of said wide metal shape, located in said wide diameter opening, and comprised of said narrow metal, located in said narrow diameter opening, with said narrow metal shape, overlying and contacting, the portion of said first metal interconnect structure, exposed at the bottom of said narrow diameter opening.
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Accused Products
Abstract
A process for creating a metal filled, dual damascene opening, in a composite insulator layer, has been developed. The process features selective RIE procedures, used to create a wide diameter opening in an upper silicon oxide layer, and a narrow diameter opening in a lower silicon oxide layer. Small area, silicon nitride islands, or shapes, a component of the composite insulator layer, are used as a stop layer, during the selective RIE procedures. The use of small area, silicon nitride shapes, offers less composite insulator capacitance, than counterparts fabricated using larger area, silicon nitride stop layers.
38 Citations
24 Claims
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1. A method of fabricating a metal structure, on a semiconductor substrate, with the metal structure featuring a wide, metal shape, on underlying, narrow metal shape, comprising the steps of:
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providing a first metal interconnect structure, located in an opening in a first insulator layer; depositing a first silicon nitride layer, a second insulator layer, and a second silicon nitride layer, on the top surface of said first metal interconnect structure, and on the top surface of said first insulator layer; patterning of said second silicon nitride layer, to form silicon nitride islands, with narrow spaces between said silicon nitride islands, exposing a portion of the top surface of underlying, said second insulator layer; depositing a third insulator layer; forming a photoresist shape, on said third insulator layer, featuring a wide opening in said photoresist shape, exposing a portion of the top surface of said third insulator layer; performing a selective, first dry etching procedure, using said wide opening, in said photoresist shape as a mask, to create a wide diameter opening, in said third insulator layer, exposing a portion of said silicon nitride islands, and exposing a narrow space, located between said silicon nitride islands, then continuing said selective, first dry etching procedure, to create a narrow diameter opening in said second insulator layer, using portions of said silicon nitride islands, exposed in said wide diameter opening, as a mask, to create a narrow diameter opening in said second insulator layer, exposing a portion of said first silicon nitride layer, located at the bottom of said narrow diameter opening; performing a selective, second dry etching procedure, to remove portion of said first silicon nitride layer, located at the bottom of said narrow diameter opening, exposing a portion of the top surface of said first metal interconnect structure, and removing portions of said silicon nitride islands, exposed in said wide diameter opening; and forming said metal structure, comprised of said wide metal shape, located in said wide diameter opening, and comprised of said narrow metal, located in said narrow diameter opening, with said narrow metal shape, overlying and contacting, the portion of said first metal interconnect structure, exposed at the bottom of said narrow diameter opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a metal structure, on a semiconductor substrate, comprised of a wide metal shape, on an underlying narrow metal shape, using a dual damascene process, and using silicon nitride islands as an etch stop, during the patterning of a dual damascene opening, in a composite insulator layer, comprising the steps of:
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providing a first silicon oxide layer, with an opening in said first silicon oxide layer; forming a first metal interconnect structure, in said opening in said first silicon oxide layer; depositing a first silicon nitride layer; depositing a second silicon oxide layer; depositing a second silicon nitride layer; patterning of said second silicon nitride layer, to create said silicon nitride islands, on said second silicon oxide layer, and creating a narrow space between said silicon nitride islands, exposing a portion of the top surface of said second silicon oxide layer; depositing a third silicon oxide layer; forming a photoresist shape, with a wide diameter opening in said photoresist shape, exposing a portion of the top surface of said third silicon oxide layer; performing a selective, first RIE procedure, using said wide diameter opening, in said photoresist shape, as a mask, to create a wide diameter opening, in said third silicon oxide layer, than using portions of said silicon nitride islands, exposed in said wide diameter opening, in said third silicon oxide layer, as a mask, to create a narrow diameter opening, in said second silicon oxide layer, exposing a portion of said first silicon nitride layer, located at the bottom of said narrow diameter opening; performing a selective, second RIE procedure, removing said portions of said silicon nitride islands, exposed in said wide diameter opening, in said third silicon oxide layer, and removing said portion of said first silicon nitride layer, exposed at the bottom of said narrow diameter opening, exposing a portion of the top surface of said first metal interconnect structure; depositing a metal layer; and removing portions of metal layer from the top surface of said third silicon oxide layer, forming said metal structure in said dual damascene opening, with said metal structure comprised of a wide metal shape, located in said wide diameter opening, and comprised of a narrow metal shape, located in said narrow diameter opening. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification