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Plasma etching methods

  • US 6,093,655 A
  • Filed: 02/12/1998
  • Issued: 07/25/2000
  • Est. Priority Date: 02/12/1998
  • Status: Expired due to Term
First Claim
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1. A plasma etching method comprising:

  • forming polymer material over at least some internal surfaces of a plasma etch chamber and forming polymer material over at least some surfaces of a semiconductor wafer received within the plasma etch chamber; and

    plasma etching substantially all polymer material from the chamber internal surfaces while at least some polymer material remains on the wafer.

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