Split gate flash memory with minimum over-erase problem

• US 6,093,945 A
• Filed: 07/09/1998
• Issued: 07/25/2000
• Est. Priority Date: 07/09/1998
• Status: Expired due to Fees

• Current Assignee: Winbond Electronics Corporation
• Original Assignee: Winbond Electronics Corporation
• Inventors: Yang, Yu-Hao
• Primary Examiner(s): HARDY, DAVID B
• Application Number:
  US09/113,032
• Time in Patent Office: 747 Days
• Field of Search: 257/316, 257/317
• US Class Current: 257/317
• CPC Class Codes: H01L 29/40114 the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
• CPC Class Codes: H01L 29/42332 with the floating gate formed by two or more non connected parts, e.g. multi-particles flating gate

Abstract

A split-gate semiconductor flash memory contains an outwardly-diverging control gate stacked on but separated from a pair of opposing floating gates via an inter-poly dielectric layer. The split-gate flash memory is formed by (a) forming a first dielectric layer having a trench region on a substrate; (b) forming a tunnel oxide layer in the trench region; (c) forming a first polysilicon layer covering the first dielectric layer and the tunnel oxide layer; (d) applying an anisotropic etching technique on the first polysilicon layer to form a pair of opposing polysilicon sidewall spacers on the sidewalls which will eventually become floating gates; (e) depositing an inter-poly dielectric layer on the polysilicon sidewall spacers and the tunnel oxide layer; (f) filling the channel area between the pair of polysilicon sidewall spacers with a second polysilicon layer; (g) planarizing the second polysilicon layer so that relative to the first dielectric layer to form a control gate; (h) removing the first dielectric layer, capping the control gate and the floating gate with a final oxide layer, and forming source and drain regions in the substrate using ion implantation. The split-gate flash memory eliminates the over-erase problem experienced with the self-aligned ETOX flash memory cells, while allowing its cell dimension to maintain at least the same using the conventional photolithography technique.

Claims

1. A split-gate semiconductor flash memory comprising:

(a) a substrate having a source region and a drain region;

(b) an oxide tunnel layer formed between said source region and said drain region having first and second ends;

(c) a pair of floating gates disposed above said first and second ends of said oxide tunnel layer; and

(d) a control gate integrally stacked above said pair of floating gates; and

(e) an inter-poly dielectric layer formed between said control gate and said pair of floating gates;

(e) wherein said pair of floating gates are structured such that their separation generally increase with distance from said substrate, and the width of said control gate also generally increases with distance from said substrate;

further wherein said split-gate semiconductor flash memory is fabricated using a process comprising the steps of;

(i) obtaining a substrate having a pad oxide layer on top thereof;

(ii) forming a first dielectric layer on said substrate, said first dielectric layer having a trench region between two sidewalls of said first dielectric layer;

(iii) removing at least a portion said pad oxide layer in said trench region, and forming a tunnel oxide layer in said trench region;

(iv) forming a first polysilicon layer covering said first dielectric layer and said tunnel oxide layer;

(v) applying an anisotropic etching technique on said first polysilicon layer to form a pair of opposing polysilicon sidewall spacers on said sidewalls of said first dielectric layer to become a pair of floating gates, respectively, said pair of opposing polysilicon sidewall spacers collectively define therebetween a channel area above said substrate, wherein said channel area is characterized in that its width generally increases with distance from said substrate;

(vi) depositing an inter-poly dielectric layer on said polysilicon sidewall spacers and said tunnel oxide layer;

(vii) filling said channel area between said pair of polysilicon sidewall spacers with a second polysilicon layer;

(viii) removing portion of said second polysilicon layer so that it becomes substantially leveled with said first dielectric layer to form a control gate; and

(ix) removing said first dielectric layer, capping said control gate and said floating gate with a final oxide layer, and forming source and drain regions in said substrate using ion implantation.

2. The split-gate semiconductor flash memory according to claim 1 wherein said first dielectric layer is formed using a photolithography technique in conjunction with a photoresist.

3. The split-gate semiconductor flash memory according to claim 1 wherein said first dielectric layer is an oxide layer, a polysilicon layer, or a silicon nitride layer.

4. The split-gate semiconductor flash memory according to claim 1 wherein said tunnel oxide layer is an oxide layer or a nitride layer.

5. The split-gate semiconductor flash memory according to claim 1 wherein said second polysilicon layer above said first dielectric layer is removed using a chemical-mechanical polishing technique or an anisotropic dry etch technique.

6. The split-gate semiconductor flash memory according to claim 1 wherein said trench region is formed which is wider than the design width of said control gate of said split-gate semiconductor.

7. The split-gate semiconductor flash memory according to claim 1 wherein said trench region has a width ranging from 1 nm to 5 μ

m.