Radio frequency switch circuit having resistors connected to back gates of transistors

• US 6,094,088 A
• Filed: 02/26/1998
• Issued: 07/25/2000
• Est. Priority Date: 02/26/1997
• Status: Expired due to Term

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Yano, Hitoshi
• Primary Examiner(s): Wells, Kenneth B.
• Application Number:
  US09/030,777
• Time in Patent Office: 880 Days
• Field of Search: 327/534-537
• US Class Current: 327/534
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00
• CPC Class Codes: H03K 2217/0018 Special modifications or use of the back gate voltage of a FET

Abstract

In a switch circuit, at least one transistor has a source, a drain, a gate for receiving a control voltage and a back gate. At least one resistor is connected between the back gate of the transistor and a ground terminal.

Claims

1. A switch circuit comprising:

first, second and third terminals;

a ground terminal;

a first transistor connected between said first and third terminals;

a second transistor connected between said second and third terminals;

a third transistor connected between said first terminal and said ground terminal;

a fourth transistor connected between said second terminal and said ground terminal;

a first resistor connected between a back gate of said first transistor and said ground terminal;

a second resistor connected between a back gate of said second transistor and said ground terminal;

a third resistor connected between a back gate of said third transistor and said ground terminal;

a fourth resistor connected between a back gate of said fourth transistor and said ground terminal;

gates of said first, second, third and fourth transistors being controlled by control voltages.

2. The switch circuit as set forth in claim 1, further comprising fifth, sixth, seventh and eight resistors connected to the gates of said first, second, third and fourth transistors, respectively,

said control voltages being supplied via said fifth, sixth, seventh and eight resistors to the gates of said first, second, third and fourth transistors.

3. The switch circuit as set forth in claim 1, wherein each of said first, second, third and fourth transistors comprises a MOS transistor using silicon.

4. The switch circuit as set forth in claim 1, wherein each of said first, second, third and fourth transistors comprises a junction field effect transistor using silicon.

5. A switch circuit comprising:

first, second, third and fourth terminals;

a ground terminal;

a first transistor connected between said first and third terminals;

a second transistor connected between said first and third terminals;

a third transistor connected between said second and fourth terminals;

a fourth transistor connected between said second and fourth terminals;

a first resistor connected between a back gate of said first transistor and said ground terminal;

a second resistor connected between a back gate of said second transistor and said ground terminal;

a third resistor connected between a back gate of said third transistor and said ground terminal;

a fourth resistor connected between a back gate of said fourth transistor and said ground terminal;

gates of said first, second, third and fourth transistors being controlled by control voltages.

6. The switch circuit as set forth in claim 5, further comprising fifth, sixth, seventh and eight resistors connected to the gates of said first, second, third and fourth transistors, respectively,

said control voltages being supplied via said fifth, sixth, seventh and eight resistors to the gates of said first, second, third and fourth transistors.

7. The switch circuit as set forth in claim 5, wherein each of said first, second, third and fourth transistors comprises a MOS transistor using silicon.

8. The switch circuit as set forth in claim 5, wherein each of said first, second, third and fourth transistors comprises a junction field effect transistor using silicon.

9. A switch circuit comprising a plurality of switches each having first and second inputs and one output, the first and second inputs of one of said switches being connected to the outputs of two other ones of said switches, each of said switches comprising:

a first transistor connected between said first input and said output;

a second transistor connected between said second input and said output;

a third transistor connected between said first input terminal and a ground terminal;

a fourth transistor connected between said second terminal and said ground terminal;

a first resistor connected between a back gate of said first transistor and said ground terminal;

a second resistor connected between a back gate of said second transistor and said ground terminal;

a third resistor connected between a back gate of said third transistor and said ground terminal;

a fourth resistor connected between a back gate of said fourth transistor and said ground terminal;

gates of said first, second, third and fourth transistors being controlled by control voltages.

10. The switch circuit as set forth in claim 9, wherein each of said switches further comprises fifth, sixth, seventh and eight resistors connected to the gates of said first, second, third and fourth transistors, respectively,

said control voltages being supplied via said fifth, sixth, seventh and eight resistors to the gates of said first, second, third and fourth transistors.

11. The switch circuit as set forth in claim 9, wherein each of said first, second, third and fourth transistors comprises a MOS transistor using silicon.

12. The switch circuit as set forth in claim 9, wherein each of said first, second, third and fourth transistors comprises a junction field effect transistor using silicon.

13. A switch circuit comprising a plurality of switches each having first and second input and first and second outputs, one of the first and second outputs of one of said switches being connected to one of the first and second inputs of another of said switches, each of said switches comprising:

a first transistor connected between said first input and said first output;

a second transistor connected between said first input and said second output;

a third transistor connected between said second input and said first output;

a fourth transistor connected between said second input and said second output;

a first resistor connected between a back gate of said first transistor and a ground terminal;

a second resistor connected between a back gate of said second transistor and said ground terminal;

a third resistor connected between a back gate of said third transistor and said ground terminal;

a fourth resistor connected between a back gate of said fourth transistor and said ground terminal;

gates of said first, second, third and fourth transistors being controlled by control voltages.

14. The switch circuit as set forth in claim 13, wherein each of said switches further comprises fifth, sixth, seventh and eighth resistors connected to the gates of said first, second, third and fourth transistors, respectively,

said control voltages being supplied via said fifth, sixth, seventh and eight resistors to the gates of said first, second, third and fourth transistors.

15. The switch circuit as set forth in claim 13, wherein each of said first, second, third and fourth transistors comprises a MOS transistor using silicon.

16. The switch circuit as set forth in claim 13, wherein each of said first, second, third and fourth transistors comprises a junction field effect transistor using silicon.