Bidirectional trench gated power mosfet with submerged body bus extending underneath gate trench

• US 6,096,608 A
• Filed: 11/03/1998
• Issued: 08/01/2000
• Est. Priority Date: 06/30/1997
• Status: Expired due to Term

• Current Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Original Assignee: Siliconix Incorporated (Vishay Intertechnology Incorporated)
• Inventors: Williams, Richard K.
• Primary Examiner(s): Whitehead, Jr., Carl
• Assistant Examiner(s): GUERRERO, MARIA F
• Application Number:
  US09/186,216
• Time in Patent Office: 637 Days
• Field of Search: 438/138, 438/270, 438/274, 438/152, 438/589, 438/238
• US Class Current: 438/270
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/7808 the other device being a breakdown diode, e.g. Zener diode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A trench power MOSFET includes a body region which is not shorted to the source region and which is entirely covered by the source region within each cell of the MOSFET. The body region within each MOSFET cell is brought to the surface of the substrate (or epitaxial layer overlying the substrate) in an area outside of the MOSFET cell, and is connected to a body contact bus which is electrically insulated from the source bus. A deep diffusion of the same conductivity type as the body region may be formed adjacent the trench gate but outside of a MOSFET cell to protect the gate oxide from excessive field potentials at the corners of the gate. The deep diffusion is also connected to the body contact bus, which may include a metal layer, a submerged region of the second conductivity, or both.

Claims

1. A method of forming a trench power MOSFET comprising:

providing a semiconductor substrate of a first conductivity type;

growing an epitaxial layer of the first conductivity type on the substrate;

forming a first mask layer on a surface of the epitaxial layer, the first mask layer having a first opening;

implanting dopant of a second conductivity type opposite to the first conductivity type through the first opening to form a deep diffusion of the second conductivity type in the epitaxial layer;

removing the first mask layer;

forming a second mask layer on the surface of the epitaxial layer, the second mask layer having a second opening;

etching the epitaxial layer through the second opening to form a trench in the epitaxial layer;

forming a first insulating layer on a wall of the trench;

introducing a conductive gate material into the trench;

implanting dopant of the second conductivity type to form a body region adjacent the trench;

implanting dopant of the first conductivity type in a first area of the surface of the epitaxial layer to form a source region adjacent the trench and the surface of the epitaxial layer;

implanting dopant of the second conductivity type in a second area of the surface of the epitaxial layer to form a body contact region adjacent the second area of the surface of the epitaxial layer, the body contact region adjoining and being more heavily doped than the body region, the second area occupied by the body contact region at the surface of the epitaxial layer being spaced apart from the first area occupied by the source region at the surface of the epitaxial layer;

forming a second insulating layer over the surface of the epitaxial layer;

forming first, second and third contact openings through the second insulating layer, the first contact opening exposing a portion of the source region, the second contact opening exposing a portion of the body contact region, and the third contact opening exposing a portion of the deep diffusion;

depositing a metal layer, the metal layer making electrical contact with the source region, body contact region and deep diffusion through the first, second and third contact openings, respectively; and

separating the metal layer into a source contact bus and a body contact bus, the source contact bus including a portion of the metal layer which extends into the first opening and the body contact bus including a portion of the metal layer which extends into the second and third openings.

2. The method of claim 1 wherein the deep diffusion is formed such that a bottom of the deep diffusion is from 0.5 to 2.0 μ

m from the substrate.

3. The method of claim 1 wherein the deep diffusion is formed adjacent a wall of the trench, method further comprising:

implanting dopant of the second conductivity type to form a second deep diffusion extending in a direction generally orthogonal to the deep diffusion;

forming a fourth contact opening through the second insulating layer, the fourth contact opening exposing the second deep diffusion;

depositing the metal layer such that the metal layer makes electrical contact with the second deep diffusion through the fourth contact opening; and

separating the metal layer into the source contact bus and the body contact bus such that the body contact bus includes a portion of the metal layer that extends into the fourth contact opening.

4. A method of forming a trench power MOSFET comprising:

providing a semiconductor substrate of a first conductivity type;

growing an epitaxial layer of the first conductivity type on the substrate;

forming a first mask layer on a surface of the epitaxial layer, the first mask layer having a first opening;

implanting dopant of a second conductivity type opposite to the first conductivity type through the first opening to form a deep diffusion of the second conductivity type in the epitaxial layer, the deep diffusion including a first longitudinal portion which extends in a first direction and a second longitudinal portion which extends in a second direction orthogonal to the first longitudinal portion;

removing the first mask layer;

forming a second mask layer on the surface of the epitaxial layer, the second mask layer having a second opening;

etching the epitaxial layer through the second opening to form a trench in the epitaxial layer, the trench extending longitudinally in the first direction and being positioned adjacent the first longitudinal portion of the deep diffusion and extending through the second longitudinal portion of the deep diffusion, a bottom of the second longitudinal portion of the deep diffusion being at a level in the epitaxial layer below a bottom of the trench;

forming a first insulating layer on a wall of the trench;

introducing a conductive gate material into the trench;

implanting dopant of the second conductivity type to form a body region adjacent the trench on an opposite side of the trench from the first longitudinal portion of the deep diffusion, the body region being in electrical contact with the second longitudinal portion of the deep diffusion; and

implanting dopant of the first conductivity type to form a source region adjacent the trench and the surface of the epitaxial layer.