Formation of microchannels from low-temperature plasma-deposited silicon oxynitride
First Claim
1. A method for forming a fluid microchannel in a substrate, comprising steps for:
- (a) forming a trench below an upper surface of the substrate;
(b) filling the trench with a sacrificial material;
(c) forming at least one silicon oxynitride layer covering the trench; and
(d) removing the sacrificial material from the trench, thereby forming the microchannel.
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Accused Products
Abstract
A process for forming one or more fluid microchannels on a substrate is disclosed that is compatible with the formation of integrated circuitry on the substrate. The microchannels can be formed below an upper surface of the substrate, above the upper surface, or both. The microchannels are formed by depositing a covering layer of silicon oxynitride over a mold formed of a sacrificial material such as photoresist which can later be removed. The silicon oxynitride is deposited at a low temperature (≦100° C.) and preferably near room temperature using a high-density plasma (e.g. an electron-cyclotron resonance plasma or an inductively-coupled plasma). In some embodiments of the present invention, the microchannels can be completely lined with silicon oxynitride to present a uniform material composition to a fluid therein. The present invention has applications for forming microchannels for use in chromatography and electrophoresis. Additionally, the microchannels can be used for electrokinetic pumping, or for localized or global substrate cooling.
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Citations
40 Claims
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1. A method for forming a fluid microchannel in a substrate, comprising steps for:
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(a) forming a trench below an upper surface of the substrate; (b) filling the trench with a sacrificial material; (c) forming at least one silicon oxynitride layer covering the trench; and (d) removing the sacrificial material from the trench, thereby forming the microchannel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A method for forming a fluid microchannel on a substrate, comprising steps for:
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(a) depositing a sacrificial material over an upper surface of the substrate and patterning the sacrificial material to form an elongate-shaped mold for the microchannel to be formed on the substrate; (b) depositing at least one covering layer of silicon oxynitride over the patterned sacrificial material, and providing at least one opening for exposing the sacrificial material; and (c) removing the sacrificial material through the opening, thereby forming the microchannel. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
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Specification