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Semiconductor device having a plurality of parallel drift regions

  • US 6,097,063 A
  • Filed: 01/21/1997
  • Issued: 08/01/2000
  • Est. Priority Date: 01/22/1996
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising a drift region, said drift region having a drift current flowing if said drift region is in an ON mode, said drift region being depleted if said drift region is in an OFF mode, said drift region being formed as a structure comprisinga plurality of first conductivity type drift path regions connected together in parallel to form a group of parallel drift paths,a plurality of second conductivity type compartment regions, each of said second conductivity type compartment regions being positioned between adjacent said first conductivity type drift path regions to thereby form p-n junctions therebetween,a first additional second conductivity type side region connected to an outer side of a first conductivity type drift path region positioned at a first outer side of said group of parallel drift paths, wherein said first additional second conductivity type side region has substantially the same length and thickness as that of said second conductivity type compartment regions, anda second additional second conductivity type side region connected to an outer side of a first conductivity type drift path region positioned at a second outer side of said group of parallel drift paths, wherein said second additional second conductivity type side region has substantially the same length and thickness as that of said second conductivity type compartment regions.

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