Electro-static discharge protection structure for semiconductor devices
First Claim
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1. An electro-static discharge (ESD) protection structure for semiconductor devices, said structure comprising:
- a plurality of first ring-shaped gate structures formed on a semiconductor wafer;
a plurality of first doped regions formed in said wafer in inner areas of said first ring shape structures to act as drains, said plurality of first doped regions including n conductive type ions;
a plurality of second doped regions formed in said wafer, said plurality of second doped regions being second ring shape structures;
wherein each of said plurality of second doped regions surrounds only one of said plurality of gate structures; and
wherein said plurality of second doped regions includes n conductive type ions to serve as sources;
a p conductive type ions region formed around said plurality of second doped regions and between thereof, thereby separating said plurality of second doped regions; and
a third ring shape structure having n conductive type ions surrounding said p conductive type ions region and being separated from said p conductive type ions region with a space to act as a guard ring.
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Abstract
The structure includes a plurality of first ring shape structure formed on a semiconductor wafer to act as the gates of the MOS devices. The areas in the inner side of the first ring shape structures are drain regions. A plurality of source regions having second ring shape structures are formed around each sides the first ring shape structures. A p conductive type region is formed in the wafer adjacent to the source regions. A third ring shape structure is formed in the semiconductor wafer to surround the p+conductive type region for serving as a guard ring.
68 Citations
9 Claims
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1. An electro-static discharge (ESD) protection structure for semiconductor devices, said structure comprising:
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a plurality of first ring-shaped gate structures formed on a semiconductor wafer; a plurality of first doped regions formed in said wafer in inner areas of said first ring shape structures to act as drains, said plurality of first doped regions including n conductive type ions; a plurality of second doped regions formed in said wafer, said plurality of second doped regions being second ring shape structures; wherein each of said plurality of second doped regions surrounds only one of said plurality of gate structures; and wherein said plurality of second doped regions includes n conductive type ions to serve as sources; a p conductive type ions region formed around said plurality of second doped regions and between thereof, thereby separating said plurality of second doped regions; and a third ring shape structure having n conductive type ions surrounding said p conductive type ions region and being separated from said p conductive type ions region with a space to act as a guard ring. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A structure of NMOS devices formed in a semiconductor wafer, said structure comprising:
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at least two pairs of gates formed over said semiconductor wafer, each pair of said gates being spaced from each other; drains, including n-conductive ions, formed in said semiconductor wafer in areas between two said gates of a same pair; sources, including n-conductive ions, formed in said semiconductor wafer adjacent to said gates separated from said drains, at least two of said sources formed in said space; first p conductive type ion regions formed in said semiconductor wafer being adjacent to said sources that are not in said space; a second p conductive type ion region formed in said semiconductor wafer being between and adjacent to said sources that are in said space, wherein said first p conductive type ion regions and said second p conductive type ion regions formed between said at least two pair of gates provide for a uniform current distribution; and first conductive ion regions formed in a peripheral area of said first p conductive type ions regions and kept a distance from said first p conductive type ions regions to act as a guard ring.
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Specification