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Metal attachment method and structure for attaching substrates at low temperatures

  • US 6,097,096 A
  • Filed: 07/11/1997
  • Issued: 08/01/2000
  • Est. Priority Date: 07/11/1997
  • Status: Expired due to Term
First Claim
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1. A high density integrated circuit comprising:

  • a first silicon substrate structure having semiconductor device formations in accordance with a first circuit implementation and metal interlevel lines disposed on a top surface thereof, the first silicon substrate further having a protective coating covering said metal interlevel lines and a planarized low-K dielectric disposed between the metal interlevel lines, the metal interlevel lines having a melting temperature in the range on the order of less than 500°

    C. and the low-K dielectric having a dielectric K-value in the range of 2.0-3.8;

    a second silicon substrate structure having semiconductor device formations in accordance with a second circuit implementation and metal interlevel lines disposed on a top surface thereof, the second silicon substrate further having a protective coating having a thickness of less than 400 Å

    covering said metal interlevel lines and a planarized low-K dielectric disposed between the metal interlevel lines, the metal interlevel lines having a melting temperature in the range on the order of less than 500°

    C. and the low-K dielectric having a dielectric K-value in the range of 2.0-3.8; and

    said first silicon substrate structure bonded to the second silicon substrate structure at respective metal interlevel lines of said first and second silicon substrate structures.

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