Non-contact tunnelling field measurement for a semiconductor oxide layer
First Claim
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1. A method for measuring tunneling field for an oxide layer on a semiconductor wafer, said method comprising:
- (a) moving a corona gun over said wafer and depositing an increment of corona charge on said layer;
(b) moving a Kelvin probe over said wafer and measuring a voltage across said layer with said Kelvin probe;
(c) pausing an increment of time;
(d) repeating steps b and c until said voltage saturates; and
(e) using said saturation voltage to determine said tunneling field.
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Abstract
A corona source is used to repetitively apply charge to an oxide layer on a semiconductor. A Kelvin probe is used to measure the resulting voltage across the layer. The tunneling field is determined based on the value of voltage at which the voltage measurement saturates.
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4 Claims
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1. A method for measuring tunneling field for an oxide layer on a semiconductor wafer, said method comprising:
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(a) moving a corona gun over said wafer and depositing an increment of corona charge on said layer; (b) moving a Kelvin probe over said wafer and measuring a voltage across said layer with said Kelvin probe; (c) pausing an increment of time; (d) repeating steps b and c until said voltage saturates; and (e) using said saturation voltage to determine said tunneling field. - View Dependent Claims (2, 3, 4)
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