Tunnel junction head structure without current shunting

• US 6,097,579 A
• Filed: 08/21/1998
• Issued: 08/01/2000
• Est. Priority Date: 08/21/1998
• Status: Expired due to Term

• Current Assignee: Western Digital Technologies Incorporated (Western Digital Corporation)
• Original Assignee: International Business Machines Corporation
• Inventors: Gill, Hardayal Singh
• Primary Examiner(s): Cao, Allen T.
• Application Number:
  US09/137,996
• Time in Patent Office: 711 Days
• Field of Search: 360/113, 360/126, 324/252
• US Class Current: 360/324.2
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G01R 33/098 comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/012 Recording on, or reproducing or erasing from, magnetic disks G11B17/00, G11B19/00 take precedence
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures

Abstract

A magnetic tunnel junction (MTJ) device for use as a magnetic field sensor or as a memory cell in a magnetic random access (MRAM) array has one pinned ferromagnetic layer and one free ferromagnetic layer formed on opposite sides of an insulating tunnel barrier layer, and a hard biasing layer that is in proximate contact with and magnetostatically coupled to the free ferromagnetic layer. The magnetic tunnel junction in the sensor is formed on a first shield, which also serves as an electrical lead, and is made up of a stack of layers (MTJ stack). The layers in the MTJ stack are an antiferromagnetic layer, a pinned ferromagnetic layer, an insulating tunnel barrier layer, and a free ferromagnetic layer. The MTJ stack is generally rectangularly shaped with parallel side edges. A layer of hard biasing ferromagnetic material is in abutting contact to or overlapping the MTJ stack to longitudinally bias the magnetic moment of the free ferromagnetic layer in a preferred direction. A first layer of electrically insulating material isolates the hard biasing material from the first shield so that sensing current is not shunted to the hard biasing material but is allowed to flow perpendicularly through the layers in the MTJ stack. A second layer of electrically insulating material isolates the hard bias material from the second shield which also acts as an electrical lead for the MTJ stack.

Claims

1. A magnetic tunnel junction (MTJ) sensor, comprising:

a substrate;

a first shield (S1) of ferromagnetic material formed on the substrate;

a magnetic tunnel junction (MTJ) stack formed on said first shield, the MTJ stack having a generally rectangular shape and two opposite side edges, said MTJ stack comprising;

an antiferromagnetic (AFM) layer;

a pinned layer of ferromagnetic material in contact with said AFM layer;

a free layer of ferromagnetic material; and

a tunnel junction layer of electrically insulating material disposed between said pinned layer and said free layer;

a second shield (S2) of ferromagnetic material formed on and in contact with said MTJ stack;

a first insulator layer formed on the first shield layer on opposite sides of said MTJ stack and in abutting contact to the side edges of said MTJ stack;

a hard bias layer of ferromagnetic material formed on the first insulator layer on opposite sides of said MTJ stack and in abutting contact to or overlapping said MTJ stack, said hard bias layer having a magnetic moment for biasing the magnetic moment of the free layer in substantially the same direction as the moment of the hard bias layer in the absence of an applied magnetic field; and

a second insulator layer formed on the hard bias layer and separating said hard bias layer from said second shield layer.

2. The MTJ sensor as recited in claim 1, wherein the thickness of said first insulator layer is substantially equal to the thickness of said MTJ stack.

3. The MTJ sensor as recited in claim 1, wherein said first insulator layer is made of Al₂ O₃.

4. The MTJ sensor as recited in claim 1, wherein said second insulator layer is made of Al₂ O₃.

5. The MTJ sensor as recited in claim 1, further comprising:

a first electrical connection fixed on said first shield for making electrical contact from said first shield to a current source and to a signal detector; and

a second electrical connection fixed on said second shield for making electrical contact from said second shield to said current source and to said signal detector;

said first and second shields providing electrical leads for sensing the electrical resistance to sense current flow perpendicularly through the MTJ stack and sense current flow is prevented by said first insulator layer from shunting around said MTJ stack.

6. The MTJ sensor as recited in claim 1, wherein said hard bias layer is made of Co--Pt--Cr.

7. The MTJ sensor as recited in claim 1, wherein said AFM layer is made of Mn₅₀ --Fe₅₀.

8. The MTJ sensor as recited in claim 1, wherein said AFM layer is chosen from a group of materials including Mn--Fe, Ni--Mn, Pd--Mn, Pt--Mn, Pd--Pt--Mn, Ir--Mn, Rh--Mn, and Cr--Mn--Pt.

9. The MTJ sensor as recited in claim 1, wherein said first shield is made from Ni--Fe.

10. The MTJ sensor as recited in claim 1, wherein said second shield is made from Ni--Fe.

11. A disk drive system comprising:

a magnetic recording disk;

a magnetic tunnel junction (MTJ) sensor for sensing magnetically recorded data on said magnetic recording disk, said MTJ sensor comprising;

a substrate;

a first shield (S1) of ferromagnetic material formed on the substrate;

a magnetic tunnel junction (MTJ) stack formed on said first shield, the MTJ stack having a generally rectangular shape and two opposite side edges, said MTJ stack comprising;

an antiferromagnetic (AFM) layer;

a pinned layer of ferromagnetic material in contact with said AFM layer;

a free layer of ferromagnetic material; and

a tunnel junction layer of electrically insulating material disposed between said pinned layer and said free layer;

a second shield (S2) of ferromagnetic material formed on and in contact with said MTJ stack;

a first insulator layer formed on the first shield layer on opposite sides of said MTJ stack and in abutting contact to the side edges of said MTJ stack;

a hard bias layer of ferromagnetic material formed on the first insulator layer on opposite sides of said MTJ stack and in abutting contact to or overlapping said MTJ stack, said hard bias layer having a magnetic moment for biasing the magnetic moment of the free layer in substantially the same direction as the moment of the hard bias layer in the absence of an applied magnetic field; and

a second insulator layer formed on the hard bias layer and separating said hard bias layer from said second shield layer;

an actuator for moving said MTJ sensor across the magnetic recording disk so the MTJ sensor may access different regions of magnetically recorded data on the magnetic recording disk; and

a recording channel coupled electrically to the MTJ sensor for detecting changes in resistance of the MTJ sensor caused by rotation of the magnetization axis of the free ferromagnetic layer relative to the fixed magnetization of the pinned layer in response to magnetic fields from the magnetically recorded data.

12. The disk drive system as recited in claim 11, wherein the thickness of said first insulator layer is substantially equal to the thickness of said MTJ stack.

13. The disk drive system as recited in claim 11, wherein said first insulator layer is made of Al₂ O₃.

14. The disk drive system as recited in claim 11, wherein said second insulator layer is made of Al₂ O₃.

15. The disk drive system as recited in claim 11, further comprising:

a first electrical connection fixed on said first shield for making electrical contact from said first shield to a current source and to a signal detector; and

a second electrical connection fixed on said second shield for making electrical contact from said second shield to said current source and to said signal detector;

said first and second shields providing electrical leads for sensing the electrical resistance to sense current flow perpendicularly through the MTJ stack and sense current flow is prevented by said first insulator layer from shunting around said MTJ stack.

16. The disk drive system as recited in claim 11, wherein said hard bias layer is made of Co--Pt--Cr.

17. The disk drive system as recited in claim 11, wherein said AFM layer is made of Mn₅₀ --Fe₅₀.

18. The disk drive system as recited in claim 11, wherein said AFM layer is chosen from a group of materials including Mn--Fe, Ni--Mn, Pd--Mn, Pt--Mn, Pd--Pt--Mn, Ir--Mn, Rh--Mn, and Cr--Mn--Pt.

19. The disk drive system as recited in claim 11, wherein said first shield is made from Ni--Fe.

20. The disk drive system as recited in claim 11, wherein said second shield is made from Ni--Fe.