Ferroelectric memory used for the RFID system, method for driving the same, semiconductor chip and ID card

• US 6,097,622 A
• Filed: 06/03/1997
• Issued: 08/01/2000
• Est. Priority Date: 06/03/1996
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Takenaka, Hiroyuki, Shimizu, Mitsuru, Tanaka, Sumio
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): NGUYEN, HIEN N
• Application Number:
  US08/867,792
• Time in Patent Office: 1,155 Days
• Field of Search: 365/145, 365/149, 365/210
• US Class Current: 365/145
• CPC Class Codes: G11C 11/22 using ferroelectric elements

Abstract

A ferroelectric memory having a memory cell array or a plurality of memory cell arrays, word lines, where each memory cell array includes word lines. The memory also includes a plurality of plate lines, where each memory cell array includes some of the plate lines and the word line corresponds with some of the plate lines, a bit line, a word line select circuit for selecting among the word lines, and plurality of plate line select circuits, where each of the plate line select circuit is coupled to an associated plate line.

Claims

1. A ferroelectric memory comprising:

a memory cell composed by a MOSFET and a ferroelectric capacitor;

a word line connected to said memory cell;

a plate line connected to said memory cell;

a row decoder having a first inverter, whose output is coupled to said word line; and

a plate line select circuit having a second inverter and an output coupled to said plate line;

wherein one of;

a capacitance of said MOSFET is smaller than a capacitance of said capacitor;

a first product of a ratio of a length to a width of a gate in an NMOS transistor included in said first inverter and a gate capacitance of the MOSFET is approximately equal to a second product of a ratio of a length to a width of a gate in an NMOS transistor included in said second inverter and a capacitance of said capacitor; and

a third product of a ratio of a length to a width of a gate in a PMOS transistor included in said first inverter and a gate capacitance of the MOSFET is approximately equal to a fourth product of a ratio of a length to a width of a gate in a PMOS transistor included in said second inverter and a capacitance of said capacitor.

2. The ferroelectric memory according to claim 1, wherein said plate line select circuit comprises a NAND circuit and an inverter circuit.

3. The ferroelectric memory according to claim 2, comprising a second plate line select circuit, wherein said second plate line select circuit is coupled to one of input of said NAND circuit.

4. The ferroelectric memory according to claim 1, further comprising:

a control line coupled to the plate line select circuit, arranged in a column direction; and

a driving circuit coupled to the control line.

5. A ferroelectric memory comprising:

a row decoder having a first inverter, whose output is coupled to a word line; and

a plate line select circuit having a second inverter, whose output is coupled to a plate line;

wherein one of;

a first ratio of a length to a width of a gate in an NMOS transistor included in said first inverter is smaller than a second ratio of a length to a width of a gate in a PMOS transistor included in said first inverter; and

a third ratio of a length to a width of a gate in a NMOS transistor included in said second inverter is smaller than a fourth ratio of a length to a width of a gate in a PMOS transistor included in said second inverter.

6. The ferroelectric memory according to claim 5, wherein the plate line select circuit comprises a NAND circuit and an inverter circuit.

7. The ferroelectric memory according to claim 6, comprising a second plate line select circuit, wherein said second plate line select circuit is coupled to one of input of said NAND circuit.

8. The ferroelectric memory according to claim 5, further comprising:

a control line coupled to the plate line select circuit, arranged in a column direction; and

a driving circuit coupled to the control line.

9. A ferroelectric memory, comprising:

a plurality of memory cells;

word lines coupled to said memory cells;

a plurality of plate lines configured in association with said word line and each coupled to respective of said memory cells; and

plate line select circuits coupled to said plate lines,

wherein said plate line select circuit comprises three coupled circuits each having a NAND circuit coupled to an inverter circuit, a first one of the coupled circuits having as input a signal from said word line and a delay signal, and second and third ones of said coupled circuits each having as input an output of the first coupled circuit and an address signal and each outputting a control signal to one of said plate lines.

10. A ferroelectric memory comprising:

first and second memory cell arrays, each arranged in a predetermined direction;

a row detector arranged in said predetermined direction;

a word line coupled to said row decoder and being shared by said first and second memory cell arrays;

a plate line select circuit arranged between said first memory cell array and said second memory cell array; and

plurality of plate lines coupled to said plate line select circuit in association with the word line and coupled to respective of said memory cell arrays.

11. The ferroelectric memory according to claim 10, further comprising:

a driver circuit;

a plate line control line coupled to said driver circuit and an inputted to said plate line select circuit; and

a delay line coupled to said driver circuit.

12. The ferroelectric memory according to claim 10, comprising:

said plate select circuit providing a first signal to one of said plate lines, shifted in time with respect to another signal provided to another one of said plate lines.

13. The ferroelectric memory comprising

a first memory cell array;

a second memory cell array;

a row decoder paralleled to said second memory cell array;

a word line formed in said first memory cell array and said second memory cell array in common, and coupled to said row decoder;

a plate line select circuit arranged between said first memory cell array and said second memory cell array;

a first plate line formed in said first memory cell array in association with said word line, and coupled to said plate line select circuit and said first memory cell array; and

a second plate line formed in said second memory cell array, and coupled to said plate line select circuit and said second memory cell.

14. The ferroelectric memory according to claim 13, further comprising:

a driver circuit;

a plate line control line coupled to said driver circuit and an inputted to said plate line select circuit; and

a delay line coupled to said driver circuit.

15. The ferroelectric memory according to claim 13, comprising:

said plate line select circuit providing a first signal to one of said first plate line and said second plate line, shifted in time with respect to another signal provided to another one of said first plate line and said second plate line.

16. A ferroelectric memory comprising:

a first memory cell array;

a second memory cell array;

a third memory cell array;

a fourth memory cell array;

a row decoder paralleled to said second memory cell array, and said third memory cell array;

a word line formed in said first memory cell array, said second memory cell array, said third memory cell array, and fourth memory cell array in common, and coupled to said row decoder;

a first plate line select circuit arranged between said first memory cell array and said second memory cell array;

a second plate line select circuit arranged between said third memory cell array and said fourth memory cell array;

a first plate line formed in said first memory cell array in association with said word line, and coupled to said first plate line select circuit;

a second plate line formed in said second memory cell array in association with said word line, and coupled to said first plate line select circuit;

third plate line formed in said third memory cell array in association with said word line, and coupled to said second plate line select circuit; and

a fourth plate line formed in said fourth memory cell array in association with said word line, and coupled to said second plate lien select circuit.

17. A ferroelectric memory comprising:

a first memory cell array including a first sense amplifier;

a second memory cell array including a second sense amplifier;

a word line formed in common in said first memory cell array and said second memory cell array;

a row decoder coupled to said word line;

a first plate line formed in said first memory cell array in association with said word line;

a second plate line formed in said second memory cell array in association with said word line;

a first plate lines select circuit coupled to said first plate line, and comprising a NAND circuit and an inverter circuit coupled in this order;

a second plate line select circuit coupled to said second plate line, and comprise a NAND circuit and an inverter circuit coupled in this order;

a first plate line driver circuit coupled to said first plate line select circuit; and

a second plate line driver circuit coupled to said second plate line select circuit.

18. A semiconductor chip comprising:

a ferroelectric memory located in one side of the semiconductor chip;

a power supply circuit located in another side of the semiconductor chip;

a control circuit and an operational circuit located between the ferroelectric memory and the power supply circuit;

a power supply line through the control circuit and the operational circuit, coupled to the power supply circuit; and

a heat storage means formed in the power supply line.

19. The semiconductor chip according to claim 18, wherein said heat storage means is located approximately mid-way between said power supply circuit and said memory.

20. The semiconductor chip according to claim 19, wherein said power supply line comprises a narrow portion formed between the control circuit and the heat storage means.

21. A semiconductor chip comprising:

a ferroelectric memory located in one side of the semiconductor chip;

a power supply circuit located in another side of the semiconductor chip;

a control circuit and an operational circuit located between the ferroelectric memory and the power supply circuit;

power supply line through the control circuit and the operational circuit, coupled to the power supply circuit; and

a heat storage means formed in the power supply line including a contact hole supplying source power to a transistor located thereunder.

22. The semiconductor chip according to claim 21, wherein said heat storage means is located approximately mid-way between said power supply circuit and said memory.