Method of and apparatus for restoring a support surface in a semiconductor wafer processing system

• US 6,099,697 A
• Filed: 04/13/1999
• Issued: 08/08/2000
• Est. Priority Date: 04/13/1999
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Hausmann, Gilbert
• Primary Examiner(s): DIAMOND, ALAN D
• Application Number:
  US09/290,621
• Time in Patent Office: 483 Days
• Field of Search: 204/298.15, 204/192.32, 204/298.01, 204/298.02, 204/298.31, 204/298.34, 204/298.06, 204/192.1, 204/192.12, 204/192.33, 361/234, 361/235, 361/213, 361/220, 361/230, 361/212, 279/128, 438/716, 118/728, 156/272.2
• US Class Current: 204/192.12
• CPC Class Codes: H01L 21/6831 using electrostatic chucks

Abstract

Method and apparatus for restoring a support surface of a substrate support to a pre-process condition. The method comprises the steps of providing a surrogate substrate on the degraded support surface, providing the surrogate substrate with a ground connection and establishing an electric field between the support surface and the surrogate substrate to remove accumulated charges in the support surface. The apparatus comprises a process chamber having a surrogate substrate on a the support surface and connected to ground. The surrogate substrate is a semiconductor wafer or a plate or sheet of metallic material. The ground connection is established by striking a plasma that contacts the surrogate substrate and an electrical ground reference. The electric field established between the support surface and the surrogate substrate "pushes" any accumulated charges out of the support surface. Removal of the accumulated charges improves and extends the chucking ability of the support surface. The subject method also maintains the integrity of the support surface material as it is not attacked by highly energized and/or reactive species in a plasma.

Claims

1. A method for restoring a support surface of a substrate support comprising the steps of:

(a) providing a surrogate substrate on the support surface;

(b) connecting the surrogate substrate to a ground; and

(c) creating a force between the support surface and the surrogate substrate to remove accumulated charges in the support surface.

2. The method of claim 1 wherein the surrogate substrate is selected from the group consisting of a semiconductor wafer, a plate of metallic material and a sheet of metallic material.

3. The method of claim 1 wherein the step of connecting the surrogate substrate to ground further comprises striking a plasma that contacts the surrogate substrate and an electrical ground reference.

4. The method of claim 1 wherein the step of connecting the surrogate substrate to ground further comprises attaching a conductive wire to the surrogate substrate and an electrical ground reference.

5. The method of claim 1 wherein the step of creating a force between the support surface and the surrogate substrate further comprises energizing a power source connected to the substrate support to establish an electric field between the support surface and the surrogate substrate.

6. The method of claim 5 wherein the power source is capable of delivering a voltage in the range of approximately 25 KVDC.

7. The method of claim 6 wherein the voltage is delivered for a specific length of time.

8. The method of claim 7 wherein the specific length of time is approximately three minutes.

9. The method of claim 6 wherein the voltage is pulsed.

10. A method for removing accumulated charges in a support surface of an electrostatic chuck in a chamber, the method comprising the steps of:

(a) providing the support surface having the accumulated charges;

(b) disposing a surrogate substrate on the support surface;

(c) connecting the surrogate substrate to a ground; and

(d) establishing an electric field between the support surface and the surrogate substrate to drive the accumulated charges off the support surface.

11. The method of claim 10 wherein the surrogate substrate is selected from the group consisting of a semiconductor wafer, a plate of metallic material and a sheet of metallic material.

12. The method of claim 10 wherein the step of connecting the surrogate substrate to ground further comprises striking a plasma that contacts the surrogate substrate and a grounded chamber component.

13. The method of claim 10 wherein the step of connecting the surrogate substrate to ground further comprises attaching a conductive wire to the surrogate substrate and a grounded chamber component.

14. The method of claim 10 wherein the step of establishing an electric field between the support surface and the surrogate substrate further comprises energizing a power source connected to the electrostatic chuck.

15. The method of claim 14 wherein the power source is capable of delivering a voltage in the range of approximately 2-5 KVDC.

16. The method of claim 15 wherein the voltage is delivered for a specific length of time.

17. The method of claim 16 wherein the specific length of time is approximately three minutes.

18. The method of claim 15 wherein the voltage is pulsed.

19. Apparatus for restoring a support surface of an electrostatic chuck in a process chamber comprising:

at least one grounded chamber component;

a surrogate substrate disposed upon the support surface of the electrostatic chuck;

a ground path defined between the surrogate substrate and the grounded chamber component; and

a connection between the surrogate substrate and the support surface of the electrostatic chuck for removing accumulated charges in the support surface.

20. The apparatus of claim 19 wherein the connection between the surrogate substrate and the support surface is a high power DC power supply.

21. The apparatus of claim 20 wherein the ground path defined between the surrogate substrate and the grounded chamber component is a plasma contacting the surrogate substrate and the grounded chamber component.

22. The apparatus of claim 20 wherein the ground path defined between the surrogate substrate and the grounded chamber component is a ground wire attached to the surrogate substrate and the grounded chamber component.