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Low resistivity W using B.sub.2 H.sub.6 nucleation step

  • US 6,099,904 A
  • Filed: 12/02/1997
  • Issued: 08/08/2000
  • Est. Priority Date: 12/02/1997
  • Status: Expired due to Fees
First Claim
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1. A chemical vapor deposition process for depositing a tungsten film on a substrate, said method comprising:

  • (a) placing a substrate in a deposition zone;

    (b) during a first deposition stage, depositing a first layer of said tungsten film by;

    (i) flowing a process gas comprising a tungsten-containing source, a group III or V hydride and an additional reduction agent into said deposition zone, and(ii) maintaining said deposition zone at or below a first pressure while maintaining other process variables at conditions suitable to deposit said first layer of the tungsten film;

    (c) during a second deposition stage after said first stage, depositing a second layer of the tungsten film on said first layer by;

    (i) stopping the flow of said group III or V hydride into said deposition zone, and thereafter(ii) increasing the pressure in said deposition zone to a second pressure above said first pressure while maintaining other process variables at conditions suitable to deposit said second layer of the tungsten film.

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