Method of manufacturing semiconductor article
First Claim
1. A method of manufacturing a semiconductor article, characterized by comprising steps of:
- forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type;
forming a porous silicon layer in a region including said diffusion region;
preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer;
bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside;
splitting said multilayer structure along said porous silicon layer but not along said diffusion region; and
removing the porous silicon layer remaining on said split second substrate.
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Accused Products
Abstract
A method of manufacturing a semiconductor article comprises steps of forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type, forming a porous silicon layer in a region including the diffusion region, preparing a first substrate by forming a nonporous semiconductor layer on the porous silicon layer, bonding the first substrate and a second substrate together to produce a multilayer structure with the nonporous semiconductor layer located inside, splitting the multilayer structure along the porous silicon layer but not along the diffusion region and removing the porous silicon layer remaining on the split second substrate.
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Citations
55 Claims
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1. A method of manufacturing a semiconductor article, characterized by comprising steps of:
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forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type; forming a porous silicon layer in a region including said diffusion region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer but not along said diffusion region; and removing the porous silicon layer remaining on said split second substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50)
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51. A method of manufacturing a semiconductor article, characterized by comprising steps of:
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forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type; forming a porous silicon layer in a region including said diffusion region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer but not along said diffusion region; removing the porous silicon layer remaining on said split second substrate; and reusing the substrate obtained by removing the porous layer remaining on said separated first substrate as material of another first substrate.
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52. A method of manufacturing a semiconductor article, characterized by comprising steps of:
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forming a diffusion region at least on the surface of one of the sides of a silicon substrate by diffusing an element capable of controlling the conduction type; forming a porous silicon layer in a region including said diffusion region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer but not along said diffusion region;
removing the porous silicon layer remaining on said split second substrate; andreusing the substrate obtained by removing the porous layer remaining on said separated first substrate as material of another second substrate.
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53. A method of manufacturing a semiconductor article, comprising:
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forming a region incorporating an element capable of controlling the conduction type at least on the surface of a side of a silicon substrate; forming a porous silicon layer in said region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer.
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54. A method of manufacturing a semiconductor article, comprising:
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forming a p-type region incorporating an element capable of controlling the conduction type at least on the surface of a side of a silicon substrate; forming a porous silicon layer in said p-type region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer.
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55. A method of manufacturing a semiconductor article, comprising:
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forming a highly doped region incorporating an element capable of controlling the conduction type at least on the surface of one of the sides of a silicon substrate; forming a porous silicon layer in said highly doped region; preparing a first substrate by forming a nonporous semiconductor layer on said porous silicon layer; bonding said first substrate and a second substrate together to produce a multilayer structure with said nonporous semiconductor layer located inside; splitting said multilayer structure along said porous silicon layer.
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Specification