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Method of making a copper interconnect with top barrier layer

  • US 6,100,196 A
  • Filed: 09/15/1999
  • Issued: 08/08/2000
  • Est. Priority Date: 04/08/1996
  • Status: Expired due to Term
First Claim
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1. A method for forming copper interconnections in an integrated circuit comprising the steps of:

  • providing a substrate;

    forming a first insulating layer overlying the substrate;

    patterning said first insulating layer to form a trench;

    depositing a tantalum nitride barrier layer in the trench;

    forming an electroplated copper layer in the trench;

    reflowing the electroplated copper layer to form a reflowed electroplated copper layer;

    polishing the reflowed electroplated copper layer to form a copper interconnect in the trench, and to expose a portion of the tantalum nitride barrier layer;

    polishing the exposed portion of the tantalum nitride barrier layer to leave a remaining portion of the tantalum nitride barrier layer in the trench;

    forming a second insulating layer overlying the copper interconnect; and

    patterning the second insulating layer to form a via opening, wherein the via opening exposes a portion of the copper interconnect.

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