×

Hot plate with in situ surface temperature adjustment

  • US 6,100,506 A
  • Filed: 07/26/1999
  • Issued: 08/08/2000
  • Est. Priority Date: 07/26/1999
  • Status: Expired due to Fees
First Claim
Patent Images

1. An arrangement for controlling the temperature of a hotplate used for spatially adjusting and controlling the temperature of at least an upper surface of a wafer for the fabrication of semiconductor structures;

  • said arrangement, comprising;

    (a) means for supplying energy to said hotplate for heating said hot plate;

    (b) controller means for modulating the supply of energy to said hotplate so as to regulate the temperature of the hotplate surface supporting said wafer;

    (c) means for sensing the temperature of said wafer, said sensing means including a thermal detection array arranged above the upper surface of said wafer for scrutinizing the temperatures across a plurality of zones across the surface of said wafer; and

    (d) means for processing temperature information received from said energy supply responsive to temperature deviations sensed from said wafer so as to correctively adjust the temperature of said hotplate and resultingly of said wafer to a specified uniform surface wafer temperature profile.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×