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Liquid crystal display with planarizing organic gate insulator and organic planarization layer and method for manufacturing

  • US 6,100,954 A
  • Filed: 03/25/1997
  • Issued: 08/08/2000
  • Est. Priority Date: 03/26/1996
  • Status: Expired due to Term
First Claim
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1. A method for manufacturing a transistor on a substrate for a liquid crystal display, the method comprising the steps of:

  • forming a transistor over the substrate, the transistor having a gate, a source, a drain, a semiconductor layer, and a gate insulation layer, wherein the gate insulation layer includes at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB;

    forming a protection film over the transistor, the protection film including at least one of Fluorinated polyimide, Teflon, cytop, fluoropolyarylether, Fluorinated parylene, PFCB, and BCB;

    forming a first inorganic layer between the protection film and the transistor;

    forming a second inorganic layer between the gate insulation layer and the semiconductor layer;

    forming a third inorganic layer over the protection film; and

    forming a pixel electrode over the third inorganic layer, the pixel electrode being connected to one of the source and the drain.

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