Semiconductor pressure sensor including a resistive element which compensates for the effects of temperature on a reference voltage and a pressure sensor
First Claim
1. A semiconductor pressure sensor which comprises:
- a substrate;
a semiconductor pressure detecting element mounted on said substrate and including a pressure detector, said pressure detector generating a potential difference proportional to an applied pressure, and a peripheral circuit for amplifying the potential difference generated by said pressure detector based on a reference voltage applied thereto;
a reference voltage setting resistance means for setting the reference voltage to a predetermined value; and
a temperature compensating resistance means for directly compensating for an error produced in the pressure detector as a result of a temperature change, and for indirectly compensating for an error caused in the peripheral circuit by a change of the reference voltage resulting from the change in temperature, said temperature compensating resistance means being set to adjust the potential difference generated by said pressure detector based on both a temperature coefficient of said pressure detector and temperature characteristics of said reference voltage.
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Accused Products
Abstract
A semiconductor pressure sensor includes a substrate with a semiconductor pressure detecting element mounted thereon. The pressure detecting element includes a pressure detector, having two terminals, which generates a small potential difference between the two terminals in proportion to a pressure applied to the pressure sensor, and a peripheral circuit for differential amplification of the small potential difference based on a reference voltage applied thereto. Reference voltage setting resistors are used to set the reference voltage to a predetermined value. Also, temperature compensating resistors compensate for an error produced in the pressure detector as a result of change in temperature and an error caused in the peripheral by a change of the reference voltage resulting from the change in temperature, respectively.
13 Citations
8 Claims
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1. A semiconductor pressure sensor which comprises:
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a substrate; a semiconductor pressure detecting element mounted on said substrate and including a pressure detector, said pressure detector generating a potential difference proportional to an applied pressure, and a peripheral circuit for amplifying the potential difference generated by said pressure detector based on a reference voltage applied thereto; a reference voltage setting resistance means for setting the reference voltage to a predetermined value; and a temperature compensating resistance means for directly compensating for an error produced in the pressure detector as a result of a temperature change, and for indirectly compensating for an error caused in the peripheral circuit by a change of the reference voltage resulting from the change in temperature, said temperature compensating resistance means being set to adjust the potential difference generated by said pressure detector based on both a temperature coefficient of said pressure detector and temperature characteristics of said reference voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification