Method of obtaining a thin film of semiconductor material

• US 6,103,597 A
• Filed: 04/11/1997
• Issued: 08/15/2000
• Est. Priority Date: 04/11/1996
• Status: Expired due to Term

• Current Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Original Assignee: Commissariat a L'Energie Atomique (AES Corporation)
• Inventors: Biasse, Beatrice, Aspar, Bernard, Bruel, Michel
• Primary Examiner(s): TSAI, H JEY
• Application Number:
  US08/834,035
• Time in Patent Office: 1,222 Days
• Field of Search: 438/456-458, 438/953, 438/528
• US Class Current: 438/458
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

A method of obtaining a thin film from a substrate made of semiconductor material, the thin film including at least one element on one face of the substrate made of a material different from the semiconductor material, and conferring to the thin film a heterogeneous structure. The method includes implantation by bombardment of the face of said substrate and said element by ions to produce gaseous microbubbles within the volume of the substrate, and to produce a continuous zone of microbubbles within said element to demarcate a region of small thickness on the side of said face of the substrate containing said element, and a region of greater thickness formed by the rest of the substrate; the ions being chosen from among the ions of rare gases or of hydrogen gas and the temperature of the substrate being kept below the temperature at which the gas generated by the implanted ions is able to escape from the semiconductor diffusion, and; a separation of the two regions situated on each side of the zone of gaseous microbubbles, by a crystalline rearrangement effect in the substrate and the effect of microbubble pressure, whereby the region of small thickness constitutes a thin film.

Claims

1. A method of obtaining a thin film from a substrate of semiconductor material, the thin film including at least one element on a part of one face of the substrate, said element being of a different material from that of said semiconductor material, and conferring on the face a heterogeneous structure, said method comprising the steps in sequence of:

implantation by bombardment of the face of said substrate and said element by ions to produce a continuous zone of microbubbles within the volume of the substrate, and adjusting said bombardment to account for said heterogeneous structure on said face, to demarcate a region of small thickness on the side of said face of the substrate containing said element, and a region of greater thickness formed by the rest of the substrate;

the ions being chosen from among the ions of rare gases or of hydrogen gas and the temperature of the substrate being kept below the temperature at which the gas generated by the implanted ions is able to escape from the semiconductor by diffusion, and;

thermally treating the substrate at a temperature that is sufficient to fracture the substrate to separate the two regions situated on each side of the zone of gaseous microbubbles, by a crystalline rearrangement effect in the substrate and the effect of microbubble pressure;

whereby the region of small thickness constitutes a thin film.

2. A method according to claim 1, wherein said ion implantation step further comprises successive implantations, wherein the energy of the ions for each implantation is chosen in order to obtain said continuous zone of microbubbles.

3. A method according to claim 1, further comprising a thermal treatment step to correct defects induced in said element during the implantation step.

4. A method according to claim 3, wherein said thermal treatment step for correcting defects is carried out before said thermal treatment step to separate said regions of the substrate, said thermal correction treatment step being localized to the area of substrate containing said element.

5. A method according to claim 4, wherein said thermal correction treatment step is carried out using a laser beam.

6. A method according to claim 3, wherein said thermal correction treatment of defects is carried out before the thermal treatment step to separate said regions of the substrate, said thermal correction treatment step comprising bringing the substrate to a temperature sufficient to correct the defects, said temperature being less than the temperature required to obtain the separation of said two regions.

7. A method according to claim 3, wherein said thermal correction treatment of defects is carried out after the thermal treatment step to separate the said regions of the substrate.

8. A method according to claim 3, wherein said thermal correction treatment of defects and the thermal treatment step to separate the said regions of the substrate are combined into a single thermal treatment operation.

9. A method according to claim 1, wherein said element is all or part of an electronic component or an electrical conductor.

10. A method according to claim 1, further comprising the step of bringing a support into intimate contact with said face of the substrate before said thermal treatment step.

11. A method according to claim 10, wherein said support includes all or a part of at least one electronic component and/or at least one electrical conductor.