Process for producing semiconductor substrate
First Claim
1. A process for producing a semiconductor substrate comprising providing a first substrate made of silicon having a porous silicon layer formed thereon by making the first silicon substrate porous, wherein said porous silicon layer contains pores having inner walls, and a nonporous monocrystalline silicon layer epitaxially grown on the porous silicon layer, laminating the first substrate onto a second substrate in a state that at least one of lamination faces of the first and the second substrates has a silicon oxide layer and the nonporous monocrystalline silicon layer is interposed between the laminated substrates, removing any of said first silicon substrate which remains, and removing the porous silicon layer by etching, wherein the porous silicon layer is removed by etching with an etching solution, wherein the nonporous monocrystalline silicon layer and the silicon oxide layer may be etched at respective etching rates of not more than 10 angstroms per minute by the etching solution.
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Abstract
A process for producing a semiconductor substrate is provided which comprises providing a first substrate made of silicon having a porous silicon layer formed thereon by making porous the substrate silicon and a nonporous monocrystalline silicon layer epitaxially grown on the porous silicon layer, laminating the first substrate onto a second substrate in a state that at least one of lamination faces of the first and the second substrates has a silicon oxide layer and the nonporous monocrystalline silicon layer is interposed between the laminated substrates, and removing the porous silicon layer by etching, wherein the porous silicon layer is removed by etching with an etchant which etches the nonporous monocrystalline silicon layer and the silicon oxide layer at respective etching rates of not more than 10 angstroms per minute.
57 Citations
54 Claims
- 1. A process for producing a semiconductor substrate comprising providing a first substrate made of silicon having a porous silicon layer formed thereon by making the first silicon substrate porous, wherein said porous silicon layer contains pores having inner walls, and a nonporous monocrystalline silicon layer epitaxially grown on the porous silicon layer, laminating the first substrate onto a second substrate in a state that at least one of lamination faces of the first and the second substrates has a silicon oxide layer and the nonporous monocrystalline silicon layer is interposed between the laminated substrates, removing any of said first silicon substrate which remains, and removing the porous silicon layer by etching, wherein the porous silicon layer is removed by etching with an etching solution, wherein the nonporous monocrystalline silicon layer and the silicon oxide layer may be etched at respective etching rates of not more than 10 angstroms per minute by the etching solution.
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20. A process for producing a semiconductor substrate comprising steps of:
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providing a first substrate comprised of a porous monocrystalline silicon layer and a nonporous monocrystalline silicon layer; laminating the first substrate onto a second substrate so as to obtain a multilayered structure wherein a silicon oxide layer lies between lamination faces of the first and second substrates and the nonporous monocrystalline silicon layer is interposed between the laminated substrates; and removing the porous monocrystalline silicon layer from the multilayered structure by etching with an etching solution, wherein the nonporous monocrystalline silicon layer and the silicon oxide layer may be etched at respective etching rates of not more than 10 angstroms per minute by the etching solution. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 52, 53)
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37. A process for producing a semiconductor substrate comprising steps of:
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providing a first substrate comprised of a porous monocrystalline silicon layer and a nonporous monocrystalline silicon layer; laminating the first substrate onto a second substrate comprised of a silicon oxide so as to obtain a multilayered structure wherein the nonporous monocrystalline silicon layer is interposed between the laminated substrates; and removing the porous monocrystalline silicon layer from the multilayered structure by etching with an etching solution, wherein the nonporous monocrystalline silicon layer and the silicon oxide layer may be etched at respective etching rates of not more than 10 angstroms per minute by the etching solution. - View Dependent Claims (38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51)
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54. A process for producing a semiconductor member by removing, from a member having a nonporous silicon on a silicon oxide and a porous silicon on said nonporous silicon, said porous silicon, wherein an etching solution having an etching rate not higher than 10 Å
- /min. in etching both of the silicon oxide and the nonporous silicon is applied to said porous silicon, thereby etching the porous silicon.
Specification