Planarizing technique for multilayered substrates
DCFirst Claim
1. A method for fabricating a substrate, said method comprising steps of:
- providing a substrate comprising a thickness of material having a non-uniform surface, said thickness of material being implant damaged and having a substantially planar interface region at a selected depth underying said non-uniform surface;
converting said implant damaged thickness of material that is at a lower density up to said substantially planar interface region into an insulating material; and
selectively removing said insulating material from said substrate using at least an etching process to expose said substantially uniform interface region to provide a substantially uniform surface;
wherein said separation process is provided by a Smart Cut™
process or controlled cleaving process.
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Accused Products
Abstract
The present invention provides a multilayered wafer 10 such as an SOI wafer having a novel implanted layer. This implanted layer is removable and provides a resulting wafer having a substantially uniform surface. The wafer includes a bulk substrate 11 and an insulating layer 13 formed overlying the bulk substrate 15. A film of semiconductor material is formed overlying the insulating layer. Surface non-uniformities are formed overlying and in the film of semiconductor material. The non-uniformities are implanted, and are bordered by a substantially uniform interface 17 at a selected depth underlying the surface non-uniformities. The substantially uniform interface provides a substantially uniform resulting surface for the SOI wafer.
234 Citations
28 Claims
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1. A method for fabricating a substrate, said method comprising steps of:
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providing a substrate comprising a thickness of material having a non-uniform surface, said thickness of material being implant damaged and having a substantially planar interface region at a selected depth underying said non-uniform surface; converting said implant damaged thickness of material that is at a lower density up to said substantially planar interface region into an insulating material; and selectively removing said insulating material from said substrate using at least an etching process to expose said substantially uniform interface region to provide a substantially uniform surface; wherein said separation process is provided by a Smart Cut™
process or controlled cleaving process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for planarizing a surface of a silicon-on-insulator semiconductor substrate, said method comprising steps of:
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providing a semconductor substrate, said semiconductor substrate comprising a semiconductor material over a substrate material with an insulating layer sandwiched in between; forming a thickness of material having implant damage that is at a lower density therein and surface non-uniformities thereon in said semiconductor material; converting said thickness of material into an insulating material; and selectively removing said insulating material from said semiconductor material to provide a substantially uniform surface, said selective removing comprising an etching process; wherein said separation is provided by a Smart Cut.sup.™
process or a controlled cleaving process. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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Specification