Method for fabricating semiconductor device

• US 6,103,609 A
• Filed: 10/29/1998
• Issued: 08/15/2000
• Est. Priority Date: 12/11/1997
• Status: Expired due to Term

• Current Assignee: LG Semico Company Limited (SK Hynix Inc.)
• Original Assignee: LG Semico Company Limited (SK Hynix Inc.)
• Inventors: Lee, Kee Sun, Lee, Byung Hak
• Primary Examiner(s): BOOTH, RICHARD A
• Application Number:
  US09/181,653
• Time in Patent Office: 656 Days
• Field of Search: 438/592, 438/660
• US Class Current: 438/592
• CPC Class Codes: H01L 21/28044 the conductor comprising at least another non-silicon conductive layer
• CPC Class Codes: H01L 21/28061 the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction H01L21/28052 takes precedence
• CPC Class Codes: H01L 29/4925 with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with only a vertical doping structure or vertical doping variation H01L29/4916

Abstract

Method for fabricating a semiconductor device, is disclosed, in which a grain size is made coarse for forming a thin film with a low resistance, including the steps of (1) depositing an insulating film on a substrate, (2) depositing a silicon layer on the insulating film, (3) depositing an amorphous metal nitride film on the silicon layer, and (4) heat treating the amorphous metal nitride film to alter into a crystalline pure metal film.

Claims

1. A method for fabricating a semiconductor device comprising the steps of:

(1) depositing an insulating film on a substrate;

(2) depositing a silicon layer on the insulating film;

(3) depositing an amorphous metal nitride film on the silicon layer; and

,

(4) heat treating the amorphous metal nitride film to alter into a crystalline pure metal film.

2. A method as claimed in claim 1, wherein the step (4) includes the step of heat treating the amorphous metal nitride film to alter into a state in which a crystalline pure metal film state and a metal nitride film state are coexistent.

3. A method as claimed in claim 1, wherein the amorphous metal nitride film is of either tungsten or molybdenum.

4. A method as claimed in claim 1, wherein the amorphous metal nitride film has a nitrogen concentration of 10%˜

70%.

5. A method as claimed in claim 1, wherein the silicon layer is chemical vapor deposited to a thickness of 800˜

1200 Å

.

6. A method as claimed in claim 1, wherein the amorphous metal nitride film is formed to a thickness of 600˜

1500 Å

.

7. A method as claimed in claim 1, wherein the heat treatment is conducted at 900˜

1410°

C.

8. A method as claimed in claim 1, wherein the step (4) includes the steps of;

a first heat treatment conducted at a temperature ranging 400˜

600°

C. for diffusing nitrogen in the metal nitride film to outside of the metal nitride film while the metal nitride film is kept amorphous, and

a second heat treatment conducted at a temperature ranging 900˜

1410°

C. for diffusing nitrogen in the metal nitride film to outside of the metal nitride film while the metal nitride film is altered into a coexistence of a crystalline pure metal film in a surface portion thereof and a quasistable metal nitride film in a bottom portion thereof.

9. A method as claimed in claim 1, wherein the step (4) is conducted in a gas ambient containing hydrogen H₂, nitrogen N₂, and argon Ar, or any one of the gases under a vacuum to an extent the amorphous metal nitride film is not oxidized.

10. A method as claimed in claim 1, further comprising the step of selectively removing the silicon layer and the crystalline pure metal film, to form a gate electrode of the semiconductor device.

11. A method as claimed in claim 1, wherein the step (4) includes the step of forming a barrier layer at a boundary of the pure metal film and the silicon layer.

12. A method for fabricating a semiconductor device comprising the steps of:

(1) forming an insulating film on a semiconductor substrate;

(2) forming a silicon layer on the insulating film;

(3) depositing a first amorphous metal nitride film and a second amorphous metal nitride film in succession on the silicon layer;

(4) injecting impurity ions to break a lattice of the second metal nitride film; and

,

(5) heat treating the second metal nitride film having a lattice broken to alter into a crystalline pure metal film.

13. A method as claimed in claim 12, wherein the second metal nitride film has a nitrogen content of 20˜

50%.

14. A method as claimed in claim 12, wherein the second metal nitride film has a nitrogen atom concentration below 20%.

15. A method as claimed in claim 12, wherein the heat treatment in the step (5) in conducted at 600˜

1410°

C.

16. A method as claimed in claim 12, wherein at least ions of one selected from phosphorus, boron, and arsenic are injected into the second metal nitride film as the impurities in the step (4).

17. A method as claimed in claim 12, wherein the first, and second metal nitride films are of tungsten or molybdenum.

18. A method as claimed in claim 12, wherein the second metal nitride film having a lattice broken as well as a portion of the first metal nitride film are altered into pure metal film in the step (5).

19. A method as claimed in claim 12, further comprising the step of selectively removing the silicon layer, the amorphous pure metal film, and the first metal nitride film, to form a gate electrode of the semiconductor device.