Semiconductor device having reduced effective substrate resistivity and associated methods

• US 6,104,062 A
• Filed: 06/30/1998
• Issued: 08/15/2000
• Est. Priority Date: 06/30/1998
• Status: Expired due to Term

• Current Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Original Assignee: Intersil Corporation (Renesas Electronics Corporation)
• Inventors: Zeng, Jun
• Primary Examiner(s): Hardy, David
• Assistant Examiner(s): Wilson, Allan R.
• Application Number:
  US09/107,721
• Time in Patent Office: 777 Days
• Field of Search: 257/220, 257/242, 257/263, 257/341, 257/762, 257/778, 257/775, 257/773
• US Class Current: 257/341
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 23/4827 Materials
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 29/0657 characterised by the shape of the body
• CPC Class Codes: H01L 29/0834 Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
• CPC Class Codes: H01L 29/417 carrying the current to be rectified, amplified or switched
• CPC Class Codes: H01L 29/41741 for vertical or pseudo-vertical devices
• CPC Class Codes: H01L 29/456 on silicon
• CPC Class Codes: H01L 29/66333 Vertical insulated gate bipolar transistors
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/10155 : being other than a cuboid
• CPC Class Codes: H01L 2924/10158 : at the passive surface
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

A semiconductor device includes at least one device active region formed in a first surface of a semiconductor substrate, an electrical contact layer on a second surface of the semiconductor substrate, and at least one resistivity-lowering body positioned in a corresponding recess in the substrate and connected to the electrical contact layer. The body preferably comprises a material having an electrical resistivity lower than an electrical resistivity of the semiconductor substrate to thereby lower an effective electrical resistivity of the substrate. The device active region may be an active region of a power control device, such as a MOSFET or IGBT, for example. The body may preferably comprise an electrical conductor such as copper, aluminum, silver, solder, or doped polysilicon. The at least one recess and associated resistivity-lowering body preferably defines a proportion of the semiconductor substrate area adjacent the device active region greater than about 0.4 percent, and may extend into the semiconductor substrate a distance greater than about 25 percent of a thickness of the substrate.

Claims

1. A semiconductor device comprising:

a semiconductor substrate having opposing first and second surfaces, and having at least one recess extending from the second surface into interior portions;

at least one device active region formed in said semiconductor substrate adjacent the first surface thereof;

an electrical contact layer on the second surface of said semiconductor substrate; and

at least one resistivity-lowering body positioned in said at least one recess of said semiconductor substrate and connected to said electrical contact layer, said at least one resistivity-lowering body comprising a material different than said semiconductor substrate and having an electrical resistivity-lowering than an electrical resistivity of said semiconductor substrate tto thereby lower an effective electrical resistivity thereof.

2. A semiconductor device according to claim 1 wherein said at least one resistivity-lowering body fills an associated recess.

3. A semiconductor device according to claim 1 further comprising a barrier layer positioned between said at least one resistivity-lowering body and the corresponding recess.

4. A semiconductor device according to claim 1 wherein said at least one resistivity-lowering body comprises an electrical conductor having a resistivity less than about 10^-4 Ω

.cm.

5. A semiconductor device according to claim 1 wherein said at least one recess and associated resistivity-lowering body defines a proportion of the semiconductor substrate area adjacent said at least one device active region greater than about 0.4 percent.

6. A semiconductor device according to claim 1 wherein said at least one recess and associated resistivity-lowering body extends into said semiconductor substrate a distance greater than about 25 percent of a thickness of said semiconductor substrate.

7. A semiconductor device according to claim 1 wherein said at least one recess and associated resistivity-lowering body comprises an array of recesses and associated resistivity-lowering bodies.

8. A semiconductor device according to claim 7 wherein said array of recesses and associated resistivity-lowering bodies are arranged in a grid pattern.

9. A semiconductor device according to claim 1 wherein said at least one device active region comprises at least one active region of a metal-oxide semiconductor field-effect transistor (MOSFET).

10. A semiconductor device according to claim 9 wherein said MOSFET has a breakdown voltage of less than about 50 volts.

11. A semiconductor device according to claim 1 wherein said at least one device active region comprises at least one active region of an insulated gate bipolar transistor (IGBT).

12. A semiconductor device according to claim 1 wherein said at least one device active region comprises at least one active region of a microprocessor.

13. A semiconductor device according to claim 1 wherein said substrate further comprises a doped layer adjacent said at least one resistivity-lowering body, and wherein said doped layer has a doping concentration greater than adjacent portions of said semiconductor substrate.

14. A semiconductor device according to claim 1 wherein said semiconductor substrate comprises silicon.

15. A semiconductor device according to claim 14 wherein the silicon substrate has an electrical resistivity of less than about 3 mΩ

.cm.

16. A semiconductor device according to claim 1 wherein said at least one resistivity-lowering body has a thermal resistivity lower than a thermal resistivity of said semiconductor substrate.

17. A semiconductor device according to claim 1 wherein said at least one resistivity-lowering body comprises at least one of copper, silver, aluminum, and solder.

18. A semiconductor device according to claim 1 wherein said at least one resistivity-lowering body comprises polysilicon.

19. A semiconductor device comprising:

a semiconductor substrate having opposing first and second surfaces, and having at least one recess extending from the second surface into interior portions;

at least one metal-oxide semiconductor field-effect transistor (MOSFET) active region formed in said semiconductor substrate adjacent the first surface thereof;

a conduction terminal contact on the second surface of said semiconductor substrate; and

at least one resistivity-lowering body positioned in said at least one recess of said semiconductor substrate and connected to said conduction terminal contact, said at least one resistivity-lowering body comprising a material different than said semiconductor substrate and having an electrical resistivity lower than an electrical resistivity of said semiconductor substrate.

20. A semiconductor device according to claim 19 wherein said at least one resistivity-lowering body fills an associated recess.

21. A semiconductor device according to claim 19 further comprising a barrier layer positioned between said at least one resistivity-lowering body and the corresponding recess.

22. A semiconductor device according to claim 19 wherein said at least one resistivity-lowering body comprises an electrical conductor having a resistivity less than about 10^-4 Ω

.cm.

23. A semiconductor device according to claim 19 wherein said at least one recess and associated resistivity-lowering body defines a proportion of the semiconductor substrate area adjacent said at least one MOSFET active region greater than about 0.4 percent.

24. A semiconductor device according to claim 19 wherein said at least one recess and associated resistivity-lowering body extends into said semiconductor substrate a distance greater than about 25 percent of a thickness of said semiconductor substrate.

25. A semiconductor device according to claim 19 wherein said at least one recess and associated resistivity-lowering body comprises an array of recesses and associated resistivity-lowering bodies.

26. A semiconductor device comprising:

a semiconductor substrate having opposing first and second surfaces;

at least one device active region formed in said semiconductor substrate adjacent the first surface thereof;

an electrical contact layer on the second surface of said semiconductor substrate; and

at least one resistivity-lowering body connected to said electrical contact layer and extending into interior portions of said semiconductor substrate, said at least one resistivity-lowering body comprising a material having an electrical resistivity lower than about 10^-4 Ω

.cm;

said at least one resistivity-lowering body defining a proportion of the semiconductor substrate area adjacent said at least one device active region greater than about 0.4 percent and extending into said semiconductor substrate a distance greater than about 25 percent of a thickness of said semiconductor substrate.

27. A semiconductor device according to claim 26 further comprising a barrier layer positioned between said at least one resistivity-lowering body and adjacent portions of said semiconductor substrate.

28. A semiconductor device according to claim 26 wherein said at least one resistivity-lowering body comprises an array of resistivity-lowering bodies.

29. A semiconductor device according to claim 26 wherein said at least one device active region comprises at least one active region of a metal-oxide semiconductor field-effect transistor (MOSFET).

30. A semiconductor device according to claim 26 wherein said at least one device active region comprises at least one active region of an insulated gate bipolar transistor (IGBT).

31. A semiconductor device according to claim 26 wherein said at least one device active region comprises at least one active region of a microprocessor.

32. A semiconductor device comprising:

a semiconductor substrate having opposing first and second surfaces;

at least one device active region formed in said semiconductor substrate adjacent the first surface thereof;

an electrical contact layer on the second surface of said semiconductor substrate; and

at least one electrically conductive metal body connected to said electrical contact layer and extending into interior portions of said semiconductor substrate, said at least one electrically conductive metal body comprising a material having an electrical resistivity lower than an electrical resistivity of said semiconductor substrate.

33. A semiconductor device according to claim 32 wherein said at least one electrically conductive metal body comprises at least one of aluminum, copper, silver, and solder.

34. A semiconductor device according to claim 32 wherein said at least one electrically conductive metal body defines a proportion of the semiconductor substrate area adjacent said at least one device active region greater than about 0.4 percent.

35. A semiconductor device according to claim 32 wherein said at least one electrically conductive metal body extends into said semiconductor substrate a predetermined proportion of a thickness of said semiconductor substrate greater than about 25 percent.

36. A semiconductor device according to claim 32 wherein said at least one electrically conductive metal body comprises an array of bodies.

37. A semiconductor device according to claim 32 wherein said at least one device active region comprises at least one active region of a metal-oxide semiconductor field-effect transistor (MOSFET).

38. A semiconductor device according to claim 32 wherein said at least one device active region comprises at least one active region of an insulated gate bipolar transistor (IGBT).

39. A semiconductor device according to claim 32 wherein said at least one device active region comprises at least one active region of a microprocessor.

40. A semiconductor device comprising:

a semiconductor substrate having opposing first and second surfaces, and having at least one recess extending from the second surface into interior portions;

at least one device active region formed in said semiconductor substrate adjacent the first surface thereof;

an electrical contact layer on the second surface of said semiconductor substrate; and

at least one resistivity-lowering body positioned in said at least one recess of said semiconductor substrate and connected to said electrical contact layer, said at least one resistivity-lowering body comprising a material having an electrical resistivity lower than an electrical resistivity of said semiconductor substrate to thereby lower an effective electrical resistivity thereof.

said at least one recess and associated resistivity-lowering body extending into said semiconductor substrate a distance greater than about 25 percent of a thickness of said semiconductor substrate.

41. A semiconductor device according to claim 40 wherein said at least one resistivity-lowering body comprises an electrical conductor having a resistivity less than about 10^-4 Ω

.cm.

42. A semiconductor device according to claim 40 wherein said at least one recess and associated resistivity-lowering body defines a proportion of the semiconductor substrate area adjacent said at least one device active region greater than about 0.4 percent.

43. A semiconductor device according to claim 40 wherein said at least one recess and associated resistivity-lowering body comprises an array of recesses and associated resistivity-lowering bodies.

44. A semiconductor device according to claim 43 wherein said array of recesses and associated resistivity-lowering bodies are arranged in a grid pattern.

45. A semiconductor device according to claim 40 wherein said at least one device active region comprises at least one active region of a metal-oxide semiconductor field-effect transistor (MOSFET).

46. A semiconductor device according to claim 40 wherein said at least one device active region comprises at least one active region of an insulated gate bipolar transistor (IGBT).

47. A semiconductor device according to claim 40 wherein said at least one device active region comprises at least one active region of a microprocessor.

48. A semiconductor device according to claim 40 wherein said at least one resistivity-lowering body comprises at least one of copper, silver, aluminum, and solder.

49. A semiconductor device according to claim 40 wherein said at least one resistivity-lowering body comprises polysilicon.