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Semiconductor integrated capacitive acceleration sensor and relative fabrication method

  • US 6,104,073 A
  • Filed: 07/30/1997
  • Issued: 08/15/2000
  • Est. Priority Date: 07/31/1996
  • Status: Expired due to Term
First Claim
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1. An integrated capacitive acceleration sensor comprising a semiconductor material body defining a movable mass presenting movable electrodes directly facing respective fixed electrodes, and a PN junction arranged to provide isolation for biasing of said movable and fixed electrodes;

  • said semiconductor material body including a monocrystalline sensor region forming said movable mass and said movable and fixed electrodes.

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