Schottky barrier detectors for visible-blind ultraviolet detection

• US 6,104,074 A
• Filed: 12/08/1998
• Issued: 08/15/2000
• Est. Priority Date: 12/11/1997
• Status: Expired due to Fees

• Current Assignee: APA Enterprises, Inc.
• Original Assignee: Clearfield, Inc
• Inventors: Chen, Qisheng
• Primary Examiner(s): Ngo , Ngan V.
• Application Number:
  US09/206,328
• Time in Patent Office: 616 Days
• Field of Search: 257/184, 257/201, 257/449, 257/453, 257/459, 257/466, 257/472, 257/473, 257/485
• US Class Current: 257/453
• CPC Class Codes: H01L 31/108 the potential barrier being of the Schottky type

Abstract

The invention concerns the fabrication and characterization of vertical geometry transparent Schottky barrier ultraviolet detectors based on n^- /n⁺ -GaN and AlGaN structures grown over sapphire substrates. Mesa geometry devices of different active areas were fabricated and characterized for spectral responsitivity, speed and noise characteristics. The invention also concerns the fabrication and characterization of an 8×8 Schottky barrier photodiode array on GaN with a pixel size of 200 μm by 200 μm.

Claims

1. A vertical geometry transparent Schottky barrier detector capable of detecting electromagnetic radiation in the range of 200 to 350 nm, said detector comprising several layers grown over basal plane sapphire substrates;

said layers sequentially comprising;

a) a buffer layer comprising AlN;

b) a n⁺ doped layer comprising Al_x Ga_1-x N;

c) a n^- doped active layer comprising Al_x Ga_1-x N; and

,

d) a Schottky layer comprising paladium;

said detector further comprising ohmic contacts formed on the bottom doped layer.

2. The detector of claim 1 wherein the buffer layer is about 40 nm thick.

3. The detector of claim 1 wherein the n⁺ doped Al_x Ga_1-x N layer is about 0.5 to 1.5 μ

m thick.

4. The detector of claim 1 wherein the n⁺ doped Al_x Ga_1-x N layer is about 1.2 μ

m thick.

5. The detector of claim 1 wherein the n⁺ doped Al_x Ga_1-x N layer is doped with Si and has a doping level of about 3×

10¹⁸ cm^-3.

6. The detector of claim 1 wherein the n^- doped Al_x Ga_1-x N is about 0.3 to 1.5 μ

m thick.

7. The detector of claim 1 wherein the n^- doped Al_x Ga_1-x N layer is about 0.7 μ

m thick.

8. The detector of claim 1 wherein the n^- doped Al_x Ga_1-x N layer is doped with Si and has a doping level of about 3×

10¹⁶ to 1×

10¹⁷ cm^-3.

9. The detector of claim 1 wherein the ohmic contacts are about 215 nm thick and comprise Ti/Al.

10. The detector of claim 1 wherein the palladium level is about 3.5 nm thick.

11. An array of mesa type transparent Schottky barrier detectors suitable for visible-blind imaging;

said detectors comprising several layers grown over basal plane sapphire substrates;

said layers sequentially comprising;

a) a buffer layer comprising AlN;

b) a n⁺ doped layer comprising Al_x Ga_1-x N;

c) a n^- doped active layer comprising Al_x Ga_1-x N; and

,

d) a Schottky layer comprising palladium;

said detectors further comprising ohmic contacts formed on each bottom doped layer.

12. The array of claim 11 wherein each buffer layer is about 40 nm thick.

13. The array of claim 11 wherein each n⁺ doped Al_x Ga_1-x N layer is about 0.5 to 1.5 μ

m thick.

14. The array of claim 11 wherein each n⁺ doped Al_x Ga_1-x N layer is about 1.2 μ

m thick.

15. The array of claim 11 wherein each n⁺ doped Al_x Ga_1-x N layer is doped with Si and has a doping level of about 3×

10¹⁸ cm^-3.

16. The array of claim 11 wherein each n^- doped Al_x Ga_1-x N layer is about 0.3 to 1.5 μ

m thick.

17. The array of claim 11 wherein each n^- doped Al_x Ga_1-x N layer is about 0.7 μ

m thick.

18. The array of claim 11 wherein each n^- doped Al_x Ga_1-x N layer is doped with Si and has a doping level of about 3×

10¹⁶ to 1×

10¹⁷ cm^-3.

19. The array of claim 11 wherein the ohmic contacts are 215 nm thick and comprise Ti/Al.

20. The array of claim 11 wherein each palladium level is about 3.5 nm thick.