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Plasma etching with fast endpoint detector

  • US 6,104,487 A
  • Filed: 12/12/1997
  • Issued: 08/15/2000
  • Est. Priority Date: 12/20/1996
  • Status: Expired due to Term
First Claim
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1. A method for plasma etching, comprising the steps of:

  • (a.) plasma etching a wafer; and

    (b.) monitoring audio-frequency or infrasonic variation in the plasma intensity during said etching step; and

    (c.) discontinuing said etching step (a.) at a time which is dependent on said monitoring step (b.).

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