Formation of nanocrystalline semiconductor particles within a bicontinuous cubic phase
First Claim
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1. A method of producing monodispersed nanocrystalline semiconductor particles, said semiconductor particles comprising a compound formed as the reaction product of two or more reactants, comprising the steps of:
- forming a bicontinuous cubic phase including interconnected mesoporous cavities, said mesoporous cavities housing at least one and less than all of said reactants from which said compound is formed, said bicontinuous cubic phase being nonreactive with respect to all of said reactants;
diffusing the remainder of said reactants into said mesoporous cavities;
allowing said reactants to react, within said mesoporous cavities, to form nanocrystalline semiconductor particles, said mesoporous cavities being of a diameter that limits the size of said nanocrystalline semiconductor particles formed therein to no greater than about 100 nm in diameter.
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Abstract
Nanocrystalline semiconductors are synthesized within a bicontinuous cubicatrix 10. The nanocrystalline particles 12 may then be end-capped 18 with a dispersant to prevent agglomeration. One typical nanocrystalline semiconductor compound made according to the present invention is PbS. Other IV-VI semiconductors may be produced by the method of the present invention. The method of this invention may also be used to produce doped semiconductors.
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19 Claims
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1. A method of producing monodispersed nanocrystalline semiconductor particles, said semiconductor particles comprising a compound formed as the reaction product of two or more reactants, comprising the steps of:
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forming a bicontinuous cubic phase including interconnected mesoporous cavities, said mesoporous cavities housing at least one and less than all of said reactants from which said compound is formed, said bicontinuous cubic phase being nonreactive with respect to all of said reactants; diffusing the remainder of said reactants into said mesoporous cavities; allowing said reactants to react, within said mesoporous cavities, to form nanocrystalline semiconductor particles, said mesoporous cavities being of a diameter that limits the size of said nanocrystalline semiconductor particles formed therein to no greater than about 100 nm in diameter. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of producing monodispersed nanocrystalline semiconductor particles, said semiconductor particles comprising a compound formed as the reaction product of two or more reactants, comprising the steps of:
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forming a bicontinuous cubic phase including interconnected mesoporous cavities, said mesoporous cavities housing all of said reactants from which said compound is formed, said bicontinuous cubic phase being nonreactive with respect to all of said reactants; allowing said reactants to react, within said mesoporous cavities, to form nanocrystalline semiconductor particles, said mesoporous cavities being of a diameter that limits the size of said nanocrystalline semiconductor particles formed therein to no greater than about 100 nm in diameter.
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19. A method of producing monodispersed nanocrystalline semiconductor particles, said semiconductor particles comprising a compound formed as the reaction product of two or more reactants, comprising the step of reacting all of said reactants, within mesoporous cavities of a bicontinuous cubic phase, to form monodispersed nanocrystalline semiconductor particles, said mesoporous cavities being of a diameter that limits the size of said nanocrystalline semiconductor particles formed therein to no greater than about 100 nm in diameter, said bicontinuous cubic phase being nonreactive with respect to all of said reactants.
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