Layer crystal structure oxide, production method thereof, and memory element using the same

• US 6,106,616 A
• Filed: 09/09/1998
• Issued: 08/22/2000
• Est. Priority Date: 03/27/1997
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Machida, Akio, Suzuki, Masayuki, Ami, Takaaki, Nagasawa, Naomi
• Primary Examiner(s): Kunemund, Robert
• Application Number:
  US09/149,712
• Time in Patent Office: 713 Days
• Field of Search: 117/105, 117/109, 117/947
• US Class Current: 117/105
• CPC Class Codes: C30B 23/02 Epitaxial-layer growth
• CPC Class Codes: C30B 25/22 Sandwich processes
• CPC Class Codes: C30B 29/22 Complex oxides
• CPC Class Codes: C30B 29/225 based on rare earth copper oxides, e.g. high T-superconductors

Abstract

A production method of a crystal structure oxide that includes the steps of evaporating the material by heating the material to generate a gas phase and precipitating crystals from the gas phase at a precipitating part so as to produce a layer crystal structure oxide. The precipitating part is provided away from the material in a range of greater than or equal to about 10 mm to about 30 mm.

Claims

1. A production method of a crystal structure oxide comprising the steps of evaporating a material by heating to generate a gas phase, precipitating a crystal from the gas phase at a precipitating part so as to produce a layer crystal structure oxide, wherein the precipitating part is spaced apart from the material by a distance ranging from greater than or equal to about 10 mm to about 30 mm or less.

2. The production method of a crystal structure oxide according to claim 1, wherein the temperature of the precipitating part is lower than the temperature for heating the material in a range of 5°

C. or more and 20°

C. or less.

3. The production method of a crystal structure oxide according to claim 1, wherein a crystal of a layer crystal structure oxide is precipitated with a seed crystal provided as the precipitating part.

4. The production method of a crystal structure oxide according to claim 1, wherein a crystal of a layer crystal structure oxide is precipitated with a substrate provided as the precipitating part.

9. The production method of a crystal structure oxide according to claim 1, wherein a layer crystal structure oxide comprising bismuth (Bi), a first element, a second element and oxygen (O), said first element being at least one selected from the group consisting of sodium (Na), potassium (K), calcium (Ca), barium (Ba), strontium (Sr), lead (Pb) and bismuth (Bi), and said second element being at least one selected from the group consisting of iron (Fe), titanium (Ti), niobium (Nb), tantalum (Ta), tungsten (W), and copper (Cu) is produced.

10. The production method of a crystal structure oxide according to claim 1, wherein a layer crystal structure oxide comprising bismuth (Bi), a first element, a second element and oxygen (O), said first element being at least one selected from the group consisting of strontium (Sr), lead (Pb), barium (Ba), and calcium (Ca), and said second element being at least one selected from the group consisting of niobium (Nb) and tantalum (Ta).

11. The production method of a crystal structure oxide according to claim 10, wherein a layer crystal structure oxide having a ferroelectivity is produced.

5. A production method of a crystal structure oxide comprising the steps of evaporating a material by heating to generate a gas phase, precipitating a crystal from the gas phase at a precipitating part so as to produce a layer crystal structure oxide, wherein the material placed in a crucible is heated, and a crystal of a layer crystal structure oxide is precipitated with the upper side wall of the crucible with the material placed therein provided as the precipitating part.

6. A production method of a crystal structure oxide comprising the steps of evaporating a material by heating to generate a gas phase, precipitating a crystal from the gas phase at a precipitating part so as to produce a layer crystal structure oxide, wherein an oxide is used as the material.

7. A production method of a crystal structure oxide comprising the steps of evaporating a material by heating to generate a gas phase, precipitating a crystal from the gas phase at a precipitating part so as to produce a layer crystal structure oxide, wherein a flux is added to the material before heating.

8. The production method of a crystal structure oxide according to claim 7, wherein a layer crystal structure oxide containing at least bismuth is provided with bismuth oxide used as the flux.

12. A production method of a crystal structure oxide comprising the steps of evaporating a material by heating to generate a gas phase, precipitating a crystal from the gas phase at a precipitating part so as to produce a layer crystal structure oxide, the production method further comprising a first heating step for heating the material at a temperature not lower than the melting point, and

a second heating step for heating the material at a temperature lower than the melting point after the first heating step.

13. The production method of a crystal structure oxide according to claim 12, wherein the first heating step and the second heating step are conducted successively without having an interval therebetween.

14. The production method of a crystal structure oxide according to claim 12, wherein the first heating step and the second heating step are conducted with an interval therebetween.

15. The production method of a crystal structure oxide according to claim 12, wherein a flux is added to the material before heating.

16. The production method of a crystal structure oxide according to claim 15, wherein a layer crystal structure oxide containing at least bismuth is provided with bismuth oxide used as the flux.

17. The production method of a crystal structure oxide according to claim 16, wherein the heating temperature in the first heating step is 1350°

C. or more but 1500°

C. or less, and the heating temperature in the second heating step is 1000°

C. or more but 1300°

C. or less.

18. The production method of a crystal structure oxide according to claim 12, wherein an oxide is used as the material.

19. The production method of a crystal structure oxide according to claim 12, wherein a layer crystal structure oxide comprising bismuth (Bi), a first element, a second element and oxygen (O), said first element being at least one selected from the group consisting of sodium (Na), potassium (K), calcium (Ca), barium (Ba), strontium (Sr), lead (Pb) and bismuth (Bi), and said second element being at least one selected from the group consisting of iron (Fe), titanium (Ti), niobium (Nb), tantalum (Ta), tungsten (W), and copper (Cu) is produced.

20. The production method of a crystal structure oxide according to claim 12, wherein a layer crystal structure oxide comprising bismuth (Bi), a first element, a second element and oxygen (O), said first element being at least one selected from the group consisting of strontium (Sr), lead (Pb), barium (Ba), and calcium (Ca), and said second element being at least one selected from the group consisting of niobium (Nb) and tantalum (Ta).

21. The production method of a crystal structure oxide according to claim 20, wherein a layer crystal structure oxide having a ferroelectivity is produced.