Reactor useful for chemical vapor deposition of titanium nitride
First Claim
1. An apparatus for chemical vapor deposition, comprising:
- a reaction chamber including a pedestal for supporting a substrate, wherein a recess is formed in an upper periphery of said pedestal;
a thermally isolating ring assembly fitted into said recess and includingan edge ring having a generally flat upper surface on a top of said assembly, anda heat shield disposed between said edge ring and said pedestal and having a first cylindrical portion covering a cylindrical wall of said recess and a ring portion covering a bottom of said recess, gaps being formed between said edge ring and said heat shield and between said heat shield and said pedestal;
a showerhead faceplate member disposed in parallel opposition to and above said pedestal and having a plurality of holes therethrough and a rim extending upwardly of a face of said faceplate and outwardly of said holes, said holes for transporting a processing gas from a gas port within a showerhead assembly including said faceplate member to a processing area adjacent said substrate, said faceplate member being adapted to receive RF power to excite said processing gas into a plasma;
a cooling plate fixed to said faceplate member on a bottom side of said plate and having formed in a top side thereof a convolute channel having inlet and outlet ports disposed in a central portion of said cooling plate for passing a cooling liquid through said convolute channel;
a lid isolator electrically insulating said faceplate member from a sidewall of said chamber; and
a voltage gradient assembly having a proximate end supported on said sidewall and a distal end disposed over said central portion of said cooling plate and including first and second insulating tubes for carrying said cooling liquid and connected at said distal end to said inlet and outlet ports and a third insulating tube for carrying said processing gas and connected at said distal end to said gas port.
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Accused Products
Abstract
A plasma reaction chamber particularly configured for chemical vapor deposition of titanium nitride with a TDMAT precursor, the deposition including a plasma step. Gas is injected from a gas cavity in a showerhead electrode assembly through a large number of showerhead holes into the processing region over the wafer. The showerhead electrode is capable of being RF energized to create a plasma of a gas in the processing region. The showerhead electrode and other parts of the assembly are cooled by a cooling plate disposed above the gas cavity and connected to a rim of the showerhead electrode. A convolute water-cooling channel is formed in the cooling plate having a small cross section and numerous bends so as to create turbulent flow, thus aiding thermal transfer. The water cooling plate is connected to the showerhead electrode across a large horizontal interface, thus also aiding thermal flow. An edge ring assembly is positioned in a peripheral recess at the top of heater pedestal supporting the wafer next to the processing region. The showerhead is insulated from the chamber body by an isolator having a downwardly sloping lower surface facing the processing region. Thereby, the isolator by itself or in combination with a plasma confinement ring around the wafer confines the plasma to the process area and induces the exhaust to flow downwardly from the processing region. The assembly includes a Z-shaped heat shield disposed between the walls of the recess and of the pedestal side and other parts of the ring assembly with gaps between the various members, thereby promoting thermal isolation in the edge region as well as protecting the side of the pedestal.
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Citations
28 Claims
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1. An apparatus for chemical vapor deposition, comprising:
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a reaction chamber including a pedestal for supporting a substrate, wherein a recess is formed in an upper periphery of said pedestal; a thermally isolating ring assembly fitted into said recess and including an edge ring having a generally flat upper surface on a top of said assembly, and a heat shield disposed between said edge ring and said pedestal and having a first cylindrical portion covering a cylindrical wall of said recess and a ring portion covering a bottom of said recess, gaps being formed between said edge ring and said heat shield and between said heat shield and said pedestal; a showerhead faceplate member disposed in parallel opposition to and above said pedestal and having a plurality of holes therethrough and a rim extending upwardly of a face of said faceplate and outwardly of said holes, said holes for transporting a processing gas from a gas port within a showerhead assembly including said faceplate member to a processing area adjacent said substrate, said faceplate member being adapted to receive RF power to excite said processing gas into a plasma; a cooling plate fixed to said faceplate member on a bottom side of said plate and having formed in a top side thereof a convolute channel having inlet and outlet ports disposed in a central portion of said cooling plate for passing a cooling liquid through said convolute channel; a lid isolator electrically insulating said faceplate member from a sidewall of said chamber; and a voltage gradient assembly having a proximate end supported on said sidewall and a distal end disposed over said central portion of said cooling plate and including first and second insulating tubes for carrying said cooling liquid and connected at said distal end to said inlet and outlet ports and a third insulating tube for carrying said processing gas and connected at said distal end to said gas port. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An apparatus for chemical vapor deposition, comprising:
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a reaction chamber including a showerhead faceplate for supplying processing gas through apertures in said faceplate; a generally circular pedestal included within said reaction chamber and having a support surface placeable below said faceplate for holding a substrate being coated, a recess being formed in an upper periphery of said pedestal; a thermally isolating ring assembly fitted into said recess and including an edge ring having a generally flat upper surface on a top of said assembly, and a heat shield disposed between said edge ring and said pedestal and having (1) a first cylindrical portion covering a cylindrical wall of said recess and shielding substantially all of said cylindrical wall from said edge ring and (2) a ring portion covering a bottom of said recess and sheilding substantially all of said bottom from said edge ring, gaps being formed between said edge ring and said heat shield and between said heat shield and said pedestal. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A processing chamber for forming films on a substrate, comprising:
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a chamber body having a chamber cavity extending from a top portion to a bottom portion thereof between walls of said chamber body; a pedestal movably disposed within said chamber cavity between said top and bottom portions; a chamber lid assembly supported by said chamber body adjacent said top portion and including an isolator ring member and a showerhead both supported by said isolator ring member, said isolator ring member, said isolator ring member having an isolator ring lip with a sloping surface facing said chamber cavity and extending downwardly and away from said showerhead and a generally planar surface positioned radially inside of said sloping surface, facing said chamber cavity, and lying approximately parallel to a face of said showerhead, an annular pumping channel being formed radially outside of said isolator ring lip; and a chamber insert assembly supported by said chamber body within said chamber cavity and having a shield member supported on said chamber body and including a shield body and a shield ridge protruding from said shield body towards said isolator ring lip and forming a choke aperture therebetween communicating said chamber cavity with said pumping channel. - View Dependent Claims (17, 18, 19, 20)
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21. An edge ring assembly fittable into an recess formed in an upper, outer corner of a pedestal arranged around a vertical axis and used for supporting a substrate in a chemical vapor deposition reactor, comprising:
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an annular metallic ring arranged having a planar upper surface and supportable by three point contacts on a lower surface of said recess; and an annular Z-shaped ceramic heat shield supported on a lower side of said ring and having a first cylindrical portion extending vertically along substantially all of a side of said recess, a horizontal portion connected to said first cylindrical portion and extending horizontally along substantially all of a bottom of said recess, and a second cylindrical portion connected to said horizontal portion and extending vertically along a side of said pedestal radially outside of said recess. - View Dependent Claims (22, 23)
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24. An integral ceramic isolator configured to support a showerhead electrode on and electrically isolate said showerhead electrode from a chamber body in a plasma chemical vapor deposition reactor, said isolator and said showerhead electrode being generally symmetric about a vertical axis, said isolator comprising:
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a vertical portion extending vertically from an interior of said reactor at a bottom of said vertical portion toward an exterior of said reactor at a top of said vertical portion; a first horizontal portion extending radially outwardly from a top of said vertical portion; and a second horizontal portion extending radially inwardly from a bottom of said vertical portion and having a radially inwardly disposed planar bottom surface and a radially outwardly disposed sloping bottom surface sloping downwardly from said planar bottom surface. - View Dependent Claims (25, 26, 27, 28)
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Specification