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Reactor useful for chemical vapor deposition of titanium nitride

  • US 6,106,625 A
  • Filed: 02/13/1998
  • Issued: 08/22/2000
  • Est. Priority Date: 12/02/1997
  • Status: Expired due to Term
First Claim
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1. An apparatus for chemical vapor deposition, comprising:

  • a reaction chamber including a pedestal for supporting a substrate, wherein a recess is formed in an upper periphery of said pedestal;

    a thermally isolating ring assembly fitted into said recess and includingan edge ring having a generally flat upper surface on a top of said assembly, anda heat shield disposed between said edge ring and said pedestal and having a first cylindrical portion covering a cylindrical wall of said recess and a ring portion covering a bottom of said recess, gaps being formed between said edge ring and said heat shield and between said heat shield and said pedestal;

    a showerhead faceplate member disposed in parallel opposition to and above said pedestal and having a plurality of holes therethrough and a rim extending upwardly of a face of said faceplate and outwardly of said holes, said holes for transporting a processing gas from a gas port within a showerhead assembly including said faceplate member to a processing area adjacent said substrate, said faceplate member being adapted to receive RF power to excite said processing gas into a plasma;

    a cooling plate fixed to said faceplate member on a bottom side of said plate and having formed in a top side thereof a convolute channel having inlet and outlet ports disposed in a central portion of said cooling plate for passing a cooling liquid through said convolute channel;

    a lid isolator electrically insulating said faceplate member from a sidewall of said chamber; and

    a voltage gradient assembly having a proximate end supported on said sidewall and a distal end disposed over said central portion of said cooling plate and including first and second insulating tubes for carrying said cooling liquid and connected at said distal end to said inlet and outlet ports and a third insulating tube for carrying said processing gas and connected at said distal end to said gas port.

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