Analyzing an electronic circuit formed upon a frontside surface of a semiconductor substrate by detecting radiation exiting a backside surface coated with an antireflective material

• US 6,107,107 A
• Filed: 03/31/1998
• Issued: 08/22/2000
• Est. Priority Date: 03/31/1998
• Status: Expired due to Fees

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Dabney, Gregory A., Bruce, Victoria J.
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): JONES, JOSETTA I
• Application Number:
  US09/052,221
• Time in Patent Office: 875 Days
• Field of Search: 438/14, 438/17, 438/57, 438/72
• US Class Current: 438/14
• CPC Class Codes: G01R 31/311 of integrated circuits G01R31/31728 takes precedence
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01057 Lanthanum [La]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA

Abstract

Various methods are described for analyzing an electronic circuit formed upon a frontside surface of a semiconductor substrate having opposed frontside and backside surfaces. Each method includes forming a layer of an antireflective coating material upon the backside surface of the substrate prior to detecting electromagnetic radiation emanating from the backside surface. The layer of an antireflective coating material reduces reflections which contribute to background noise levels. As a result of reduced background noise levels, the detection capabilities of the methods and the resolutions of any scanned images produced using the methods are improved. A first method includes forming a layer of an antireflective coating material upon the backside surface of the substrate, directing a beam of electromagnetic radiation toward the backside surface of the substrate, and detecting an electrical response from the electronic circuit. A second method includes the forming of the layer of an antireflective coating material upon the backside surface of the substrate, directing the beam of electromagnetic radiation toward the backside surface of the substrate, and detecting a portion of the beam of electromagnetic radiation reflected by the electronic circuit. A third method includes forming the layer of antireflective coating material upon the backside surface of the substrate, supplying electrical power to the electronic circuit such that any crystalline defects within the electronic circuit result in the emission of electromagnetic radiation, and detecting a portion of the electromagnetic radiation exiting the semiconductor substrate through the backside surface.

Claims

1. A method for analyzing an electronic circuit formed upon a frontside surface of a semiconductor substrate having opposed frontside and backside surfaces, the method comprising:

forming a layer of an antireflective coating material upon the backside surface, wherein the antireflective coating has a refractive index substantially equal to the square root of the product of the refractive indices of the substrate and an ambient surrounding the substrate;

directing a beam of electromagnetic radiation toward the backside surface; and

detecting a response from the electronic circuit.

2. The method as recited in claim 1, wherein the forming step comprises coating a layer of lead fluoride (PbF₂) upon the backside surface.

3. The method as recited in claim 1, further comprising supplying electrical voltage and current to the electronic circuit prior to the directing step.

4. The method as recited in claim 3, wherein the magnitude of the electrical current is held constant, and wherein the magnitude of the electrical voltage varies in order to maintain the constant electrical current, and wherein the response comprises a change in the magnitude of the electrical voltage.

5. The method as recited in claim 1, wherein the beam of electromagnetic radiation comprises a wavelength at which the substrate is substantially transparent.

6. The method as recited in claim 1, wherein the electromagnetic radiation comprises laser light.

7. The method as recited in claim 1, wherein the forming step comprises coating a layer of PbF₂ upon the backside surface to a thickness substantially equal to one quarter wavelength of the electromagnetic radiation.

8. The method as recited in claim 1, further comprising the step of removing material from the backside surface prior to the forming step.

9. A method for analyzing an electronic circuit formed upon a frontside surface of a semiconductor substrate having opposed frontside and backside surfaces, the method comprising:

removing material from the backside surface such that the thickness of the substrate is reduced;

forming a layer of an antireflective coating material upon the backside surface;

supplying electrical voltage and current to the electronic circuit, wherein the magnitude of the electrical current is held constant, and wherein the magnitude of the electrical voltage varies in order to maintain the constant electrical current;

forming a beam of laser light having a wavelength at which the substrate is substantially transparent;

directing the beam of laser light toward the backside surface of the substrate such that a selected portion of the electronic circuit is illuminated by the beam of laser light; and

recording a magnitude of the electrical voltage variance.

10. The method as recited in claim 9, wherein a difference between the first and second magnitudes is directly proportional to the change in magnitude of the electrical voltage and is directly dependent upon the presence of an electric field within the selected portion.

11. A method for analyzing an electronic circuit formed upon a frontside surface of a semiconductor substrate having opposed frontside and backside surfaces, the method comprising:

forming a layer of an antireflective coating material upon the backside surface;

directing a beam of electromagnetic radiation toward the backside surface; and

detecting a portion of the beam of electromagnetic radiation reflected by the electronic circuit.

12. The method as recited in claim 11, wherein the forming step comprises forming a layer of lead fluoride (PbF₂) upon the backside surface.

13. The method as recited in claim 11, further comprising supplying electrical power to the electronic circuit prior to the directing step.

14. The method as recited in claim 11, wherein the beam of electromagnetic radiation comprises a wavelength at which the substrate is substantially transparent.

15. The method as recited in claim 11, wherein the electromagnetic radiation comprises laser light.

16. The method as recited in claim 11, wherein the forming step comprises coating a layer of PbF₂ upon the backside surface to a thickness approximately equal to one quarter wavelength of the electromagnetic radiation.

17. The method as recited in claim 11, further comprising the step of removing material from the backside surface prior to the forming step.

18. A method for analyzing an electronic circuit formed upon a frontside surface of a semiconductor substrate having opposed frontside and backside surfaces, the method comprising:

removing material from the backside surface such that the thickness of the substrate is reduced;

forming a layer of an antireflective coating material upon the backside surface;

supplying electrical power to the electronic circuit;

forming a beam of laser light having a wavelength at which the substrate is substantially transparent and is formed having a pre-defined intensity;

directing the beam of laser light toward the backside surface of the substrate such that a selected portion of the electronic circuit is illuminated by the beam of laser light;

measuring the intensity of a portion of the beam of laser light reflected by the selected portion of the electronic circuit; and

determining electrical characteristics of the selected portion by calculating the ratio of the measured intensity to the pre-defined intensity.

19. The method as recited in claim 18, wherein the ratio is directly dependent upon the presence of an electric field within the selected portion.

20. A method for analyzing an electronic circuit formed upon a frontside surface of a semiconductor substrate having opposed frontside and backside surfaces, the method comprising:

forming a layer of an antireflective coating material upon the backside surface;

supplying electrical power to the electronic circuit which responds by emitting electromagnetic radiation from defective regions of the electronic circuit; and

detecting a portion of the electromagnetic radiation exiting from the backside surface.

21. The method as recited in claim 20, wherein the forming step comprises forming a layer of lead fluoride (PbF₂) upon the backside surface.

22. The method as recited in claim 20, wherein the electromagnetic radiation comprises near infrared radiation.

23. The method as recited in claim 20, wherein the thickness of the antireflective coating is approximately one quarter wavelength of the electromagnetic radiation.

24. The method as recited in claim 20, wherein the electromagnetic radiation is within a quantifiable range of near infrared radiation.

25. The method as recited in claim 24, further comprising the step of removing material from the backside surface prior to the forming step.

26. The method as recited in claim 24, wherein the detecting step comprises positioning a detector above the backside surface of the substrate, wherein the detector is configured to detect the portion of the electromagnetic radiation exiting the backside surface.

27. A method for analyzing an electronic circuit formed upon a frontside surface of a semiconductor substrate having opposed frontside and backside surfaces, the method comprising:

forming a layer of lead fluoride (PbF₂) upon the backside surface;

directing a beam of electromagnetic radiation toward the backside surface; and

detecting a response from the electronic circuit.

30. The method as recited in claim 27, wherein the beam of electromagnetic radiation comprises a wavelength at which the substrate is substantially transparent.

31. The method as recited in claim 27, wherein the electromagnetic radiation comprises laser light.

32. The method as recited in claim 27, wherein the layer of PbF₂ is formed to a thickness substantially equal to one quarter wavelength of the electromagnetic radiation.

33. The method as recited in claim 27, further comprising the step of removing material from the backside surface prior to the forming step.

28. A method for analyzing an electronic circuit formed upon a frontside surface of a semiconductor substrate having opposed frontside and backside surfaces, the method comprising:

forming a layer of anti-reflective coating material upon the backside surface;

supplying electrical voltage and current to the electronic circuit;

directing a beam of electromagnetic radiation toward the backside surface; and

detecting a response from the electronic circuit.

29. The method as recited in claim 28, wherein the magnitude of the electrical current is held constant, and wherein the magnitude of the electrical voltage varies in order to maintain the constant electrical current, and wherein the response comprises a change in the magnitude of the electrical voltage.