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Method for fabricating a semiconductor device

  • US 6,107,148 A
  • Filed: 10/26/1998
  • Issued: 08/22/2000
  • Est. Priority Date: 10/26/1998
  • Status: Expired due to Fees
First Claim
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1. A method for fabricating a semiconductor device comprising:

  • a first step for forming an electrically insulating layer on an active area defined on a surface of a semiconductor substrate;

    a second step for forming a conductive layer on said insulating layer;

    a third step for forming a patterned photoresist layer of a downward tapered shape on said conductive layer;

    a fourth step for forming a gate electrode by patterning said conductive layer using a mask provided by bottom portions of said patterned photoresist layer;

    a fifth step for forming heavily doped regions at both sides of said gate electrode by introducing ions using a mask provided by top portions of said patterned photoresist layer;

    a sixth step for removing said patterned photoresist layer; and

    a seventh step for forming lightly doped regions at both sides of said gate electrode by introducing ions using a mask provided by said gate electrode.

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